Formation of epitaxial layers doped with conductivity-determining impurities by ion deposition

A method for depositing a monocrystalline layer of a semiconductor material containing selected conductivity-determining impurities on a semiconductor substrate comprising

• generating a beam containing ions of said semiconductor material,
• separating said semiconductor material from other ions in the beam and directing said separated semiconductor ion beam at said substrate,
• generating a beam containing ions of said conductivity-determining impurity,
• separating said conductivity-determining impurity ions from other ions in said beam and directing said conductivity-determining impurity ion beam at said substrate along an axis coincident with said semiconductor ion beam axis,
• maintaining the energy level of said coincident beams at said substrate below 0.5 Kev., whereby a layer of semiconductor material containing said conductivity-determining impurities is formed on said surface, and
• heating said layer to a temperature of from 550.degree. C. to 900.degree. C. to form said monocrystalline layer.

A method for depositing a monocrystalline epitaxial layer of a semiconductor material containing selected conductivity determining impurities on a portion of a semiconductor substrate comprising

• forming a photoresist mask over the surface of said substrate, said mask having openings defining the epitaxial layer to be deposited,
• directing a beam of ions of said semiconductor material at said masked surface at an energy level below 0.5 Kev., and simultaneously directing a beam of said conductivity-determining impurity ions at at least a portion of said substrate surface whereby a layer of semiconductor material containing said conductivity-determining impurities is deposited on said mask and exposed surface,
• removing said photoresist mask to thereby lift-off the layer of semiconductor material deposited on said mask, and
• heating said remaining layer to a temperature of at least 550.degree. C.