Homoepitaxial thin film, manufacturing method and manufacturing apparatus thereof

A manufacturing method for a homoepitaxial thin film, comprising:

• preparing a substrate having a surface of LiNbO3 single crystal or LiTaO3 single crystal;
• and
• depositing a composition identical to that of the single crystal on the surface by a high-frequency sputtering method,
• wherein a temperature of the substrate is set to lower than 450° C. and epitaxial growth is performed by the high-frequency sputtering method.

A manufacturing method for a homoepitaxial thin film, comprising:

• preparing a substrate having a surface of LiNbO3 single crystal or LiTaO3 single crystal;
• and
• depositing a composition identical to that of the single crystal on the surface by a high-frequency sputtering method,
• wherein a DC voltage is applied to the substrate and epitaxial growth is performed by the high-frequency sputtering method.

A manufacturing apparatus for a homoepitaxial thin film, comprising:

• a chamber;
• and
• a high-frequency power source that supplies high-frequency power to a target disposed inside the chamber,
• the manufacturing apparatus operating to deposit, on a substrate having a surface of LiNbO3 single crystal or LiTaO3 single crystal disposed in the chamber, a composition identical to that of the single crystal by a sputtering method,
• the manufacturing apparatus comprising
• a sputtering electrode arranged such that a surface normal of the target is offset with respect to the substrate located at a film formation position.

A manufacturing apparatus for a homoepitaxial thin film, comprising:

• a chamber;
• and
• a high-frequency power source that supplies high-frequency power to a target disposed inside the chamber,
• the manufacturing apparatus operating to deposit, on a substrate having a surface of LiNbO3 single crystal or LiTaO3 single crystal disposed in the chamber, a composition identical to that of the single crystal by a sputtering method,
• the manufacturing apparatus further comprising
• a porous metal plate and a porous quartz plate in front of the target inside the chamber, the porous metal plate being able to be grounded or applied with a DC voltage, the porous quartz plate covering the porous metal plate.