C23C 16/45557
Pulsed pressure or control pressure
Official title: {Pulsed pressure or control pressure}
C23C16/45557 (Pulsed pressure or control pressure) appears on 434 US grants and 645 published applications in this corpus.
Search patents in C23C- Granted patents
- 434
- Published applications
- 645
- Assignees
- 195
- Inventors
- 1,315
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 1 | 0 |
| 2000 | 8 | 0 |
| 2001 | 11 | 8 |
| 2002 | 5 | 20 |
| 2003 | 9 | 10 |
| 2004 | 9 | 12 |
| 2005 | 8 | 20 |
| 2006 | 5 | 13 |
| 2007 | 8 | 17 |
| 2008 | 7 | 11 |
| 2009 | 6 | 9 |
| 2010 | 8 | 11 |
| 2011 | 10 | 19 |
| 2012 | 9 | 20 |
| 2013 | 10 | 22 |
| 2014 | 11 | 15 |
| 2015 | 19 | 46 |
| 2016 | 36 | 34 |
| 2017 | 25 | 36 |
| 2018 | 19 | 11 |
| 2019 | 24 | 32 |
| 2020 | 22 | 16 |
| 2021 | 16 | 36 |
| 2022 | 16 | 45 |
| 2023 | 25 | 46 |
| 2024 | 28 | 59 |
| 2025 | 40 | 45 |
| 2026 | 30 | 32 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Remote plasma deposition with electrostatic clamping6 Oct 2026US 12,757,682 B2Lam Research Corporation
- Liquid vaporizer29 Sep 2026US 12,747,500 B2ASM IP Holding B. V.
- Film forming apparatus and method for manufacturing part having film containing silicon15 Sep 2026US 12,734,543 B2Tokyo Electron Limited
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium25 Aug 2026US 12,721,065 B2Kokusai Electric Corporation
- Semiconductor processing chamber, semiconductor processing equipment and vapor epitaxy equipment4 Aug 2026US 12,698,571 B2Advanced Micro-Fabrication Equipment Inc. China
- Semiconductor wafer processing tool with improved leak check8 Oct 2026US 2026/0314308 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods for inhibiting precursor interactions during radical-enhanced atomic layer deposition17 Sep 2026US 2026/0275519 A1Lotus Applied Technology, LLC
- Pulse ald sequence for low fluorine nucleation layer deposition3 Sep 2026US 2026/0258550 A1Lam Research Corporation
- Precursor delivery system and method for high speed cyclic deposition20 Aug 2026US 2026/0242938 A1Eugenus, Inc.
- Ultra-large-size silicon device with diamond-based heat dissipation and preparation method thereof20 Aug 2026US 2026/0247884 A1Compound Semiconductor (Xiamen) Technology Co., Ltd.
Most cited
By later US patents
- High pressure MOCVD reactor system860US 6,066,204 ABandwidth Semiconductor, LLC · 2000
- ALD apparatus and method556US 6,911,092 B2Sundew Technologies, LLC · 2005
- Method for forming layer constituted by repeated stacked layers524US 9,018,093 B2ASM IP Holding B. V. · 2015
- Method and systems for in-situ formation of intermediate reactive species486US 9,589,770 B2ASM IP Holding B. V. · 2017
- Method for stabilizing reaction chamber pressure472US 9,663,857 B2ASM IP Holding B. V. · 2017