Pulse ald sequence for low fluorine nucleation layer deposition

Abstract

A method comprising providing a 3-D structure of a partially manufactured semiconductor substrate to a chamber, the 3-D structure comprising sidewalls, a plurality of openings in the sidewalls leading to a plurality of features having a plurality of interior regions fluidically accessible through the openings; and depositing a tungsten nucleation layer in the plurality of features using one or more deposition cycles, each deposition cycle comprising steps (a) to (c): (a) dosing diborane to the chamber two or more times without purging between the diborane dose; (b) after step (a), purging the chamber; and (c) after step (b), dosing tungsten hexafluoride to the chamber one or more times, wherein a purge is performed after each tungsten hexafluoride dose.

Dependencies are inferred from the claim text.