Film forming apparatus and method for manufacturing part having film containing silicon
AssigneeTokyo Electron Limited
InventorsTakayuki Ishii, Kazuya Nagaseki, Michishige Saito
Life of this patent
Estimating the term…
Abstract
A film forming apparatus is disclosed. The apparatus comprises a chamber; an exhaust unit configured to reduce the pressure in the chamber to a predetermined vacuum level; a holder disposed in the chamber and configured to hold a film forming target member on which a film is to be formed; a supply unit configured to supply a film forming material containing silicon to a surface of the film forming target member; and a heat source configured to perform heating at the predetermined vacuum level to melt the supplied film forming material.
Claims18
A method for manufacturing a plasma resistant component having a film containing silicon comprising:
- supplying a silicon-containing material onto a surface of a target under a reduced pressure environment;
- and
- forming a plasma resistant film having high resistance to plasma on the surface of the target, by melting the silicon-containing material on the surface of the target using a heat source under the reduced pressure environment,
- wherein the reduced pressure environment is at a pressure higher than or equal to 10−6 Torr and lower than 10−2 Torr.
A method for manufacturing a plasma resistant component having a film containing silicon comprising:
- supplying a silicon-containing material onto a surface of a target under a reduced pressure environment;
- and
- forming a plasma resistant film having high resistance to plasma on the surface of the target, by melting the silicon-containing material on the surface of the target using a heat source under the reduced pressure environment,
- providing a holder which holds the target;
- and
- providing a supply source to supply the material containing silicon onto the surface of the target,
- wherein in said melting of the silicon-containing material, a spot on the surface of the target onto which the silicon-containing material is supplied is heated by the heat source, and the material containing silicon is melted while the holder is, or the supply source and the heat source are driven such that the spot moves on the surface of the target.
A method for manufacturing a plasma resistant component having a film containing silicon comprising:
- supplying a silicon-containing material onto a surface of a target under a reduced pressure environment;
- and
- forming a plasma resistant film having high resistance to plasma on the surface of the target, by melting the silicon-containing material on the surface of the target using a heat source under the reduced pressure environment,
- wherein the silicon-containing material is in powder form and is supplied onto the surface of the target by free fall.
Dependencies are inferred from the claim text.