C23C 16/303
Nitrides
Official title: {Nitrides}
C23C16/303 (Nitrides) appears on 424 US grants and 617 published applications in this corpus.
Search patents in C23C- Granted patents
- 424
- Published applications
- 617
- Assignees
- 270
- Inventors
- 1,255
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 5 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 4 | 0 |
| 2001 | 4 | 2 |
| 2002 | 11 | 17 |
| 2003 | 7 | 6 |
| 2004 | 7 | 9 |
| 2005 | 8 | 5 |
| 2006 | 6 | 18 |
| 2007 | 3 | 12 |
| 2008 | 6 | 12 |
| 2009 | 6 | 16 |
| 2010 | 12 | 24 |
| 2011 | 7 | 29 |
| 2012 | 17 | 38 |
| 2013 | 17 | 33 |
| 2014 | 28 | 22 |
| 2015 | 13 | 24 |
| 2016 | 18 | 27 |
| 2017 | 13 | 23 |
| 2018 | 16 | 39 |
| 2019 | 21 | 31 |
| 2020 | 20 | 37 |
| 2021 | 32 | 43 |
| 2022 | 28 | 50 |
| 2023 | 20 | 41 |
| 2024 | 31 | 22 |
| 2025 | 33 | 23 |
| 2026 | 18 | 14 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor wafer processing tool with improved leak check14 Jul 2026US 12,685,071 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Wafer susceptor16 Jun 2026US 12,655,518 B2Enkris Semiconductor, Inc.
- Method of deposition in high aspect ratio (HAR) features2 Jun 2026US 12,648,386 B2Tokyo Electron Limited
- Methods and systems for filling gap features on substrate surfaces28 Apr 2026US 12,612,694 B2ASM IP Holding B. V.
- Semiconductor wafer processing tool with improved leak check8 Oct 2026US 2026/0314308 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming titanium nitride thin film and method for forming electrode24 Sep 2026US 2026/0286518 A1Jusung Engineering Co., Ltd.
- Method of deposition in high aspect ratio (har) features10 Sep 2026US 2026/0271645 A1Tokyo Electron Limited
- Film forming method and film forming apparatus3 Sep 2026US 2026/0258548 A1Tokyo Electron Limited
- Integrated substrate processing apparatus and method20 Aug 2026US 2026/0242952 A1Picosun Oy
Most cited
By later US patents
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Vapor growth apparatus and vapor growth method capable of growing good productivity560US 5,730,802 ASharp Kabushiki Kaisha · 1998
- Methods for depositing thin films comprising gallium nitride by atomic layer deposition472US 8,846,502 B2ASM IP Holding B. V. · 2014
- Method of manufracturing increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride471US 7,829,460 B2Globalfoundries Inc. · 2010
- Post deposition plasma cleaning system and method471US 8,974,868 B2Tokyo Electron Limited · 2015