Method of deposition in high aspect ratio (HAR) features

A method for processing a substrate, the method comprising:

• patterning a hardmask layer disposed over a dielectric layer of a substrate to form a first recess in the hardmask layer, the first recess having an aspect ratio between 10:1 and 50:1;
• performing an initial etch process using the patterned hardmask layer as an etch mask to form a second recess in the dielectric layer;
• performing an atomic layer deposition (ALD) process to deposit a metal-containing layer over sidewalls of the patterned hardmask layer and the dielectric layer;
• and
• after the ALD process, performing a main etch process to extend the second recess in the dielectric layer, the metal-containing layer providing sidewall passivation during the main etch.

A method for processing a substrate, the method comprising:

• loading the substrate in a deposition tool comprising two process sections, the substrate comprising a patterned hardmask layer disposed over a dielectric layer;
• depositing a metal-containing layer over sidewalls of the patterned hardmask layer using the deposition tool, the depositing comprising rotating the substrate at a rotation speed such that at least a portion of the substrate passes through first and second process sections of the deposition tool per rotation, the rotating comprising
• exposing the portion of the substrate in the first process section to a metal-containing precursor to deposit the metal-containing precursor over the sidewalls, and
• exposing the portion of the substrate in the second process section to an activation gas to convert the metal-containing precursor to the metal-containing layer;
• and
• performing an anisotropic plasma etch process using the patterned hardmask layer to form a recess in the dielectric layer, the metal-containing layer providing sidewall passivation during the anisotropic plasma etch process.

A deposition system comprising:

• a process chamber;
• a rotatable substrate holder configured to hold a substrate comprising a patterned hardmask layer with a recess having a tapered profile;
• a first process section disposed in the process chamber and configured to supply a metal-containing precursor;
• and
• a second process section disposed in the process chamber and configured to supply an activation gas, the second process section being spatially segregated from the first process section;
• wherein the rotatable substrate holder is configured to rotate at a rotation speed such that the metal-containing precursor is deposited non-conformally over sidewalls of the recess, with greater thickness at a first height than at a second height lower than the first height, to correct the tapered profile of the patterned hardmask layer.