Methods and systems for filling gap features on substrate surfaces
AssigneeASM IP Holding B.V.
InventorsYasiel Cabrera, YoungChol Byun, Arul Vigneswar Ravichandran, Salvatore Luiso, Sang Ho Yu, Moataz Bellah Mousa
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Abstract
Methods and systems for forming a structure are disclosed. Exemplary methods include providing a substrate comprising a gap within a reaction chamber, selectively depositing a first material comprising molybdenum on a first surface within the gap relative to a second surface within the gap to at least partially fill the gap, and after the step of selectively depositing the first material comprising molybdenum, conformally depositing a second material comprising molybdenum over the first surface and the second surface.
Claims20
A method of forming a structure, the method comprising the steps of:
- providing a substrate within a reaction chamber, the substrate comprising a gap, the gap comprising a volume, a first surface at a bottom of the gap and a second surface on a sidewall of the gap;
- selectively depositing a first material comprising molybdenum on the first surface relative to the second surface to at least partially fill the gap;
- and
- after the step of selectively depositing the first material comprising molybdenum, conformally depositing a second material comprising molybdenum over the first surface and the second surface,
- wherein one or more of the selectively depositing the first material and conformally depositing a second material comprise a pulsed chemical vapor deposition process.
A structure comprising:
- a substrate comprising a gap, the gap comprising a volume, a bottom surface and a side surface adjacent the bottom surface, the bottom surface comprising a first material and the side surface comprising a second material different than the first material;
- a first molybdenum layer selectively formed overlying the first surface within the gap, the first molybdenum layer comprising a first grain size and filling about 10 to about 50 percent of the volume;
- and
- a second molybdenum layer conformally formed overlying the first molybdenum layer, the second molybdenum layer comprising a second grain size different than the first grain size,
- wherein the second material comprises silicon carbon nitride.
A system for filling a gap on a surface of a substrate, the system comprising:
- a controller configured to operate a first flow control valve and a second flow control valve;
- a molybdenum precursor source connected to the first flow control valve;
- a reactant source connected to the second flow control valve;
- a reaction chamber coupled downstream from the first and second flow control valves and responsive to the controller, wherein the reaction chamber is configured to:
- receive a molybdenum precursor from the molybdenum precursor source and a reactant from the reactant source;
- selectively deposit a first material comprising molybdenum on a first surface at a bottom of a gap on a substrate relative to a second surface on a sidewall of the gap to at least partially fill the gap according to the received molybdenum precursor and the reactant;
- and
- after the step of selectively depositing the first material comprising molybdenum, conformally depositing a second material comprising molybdenum over the first surface and a second surface within the gap according to the received molybdenum precursor and the reactant,
- wherein the step of conformally depositing the second material comprises:
- pulsing a second molybdenum precursor to the reaction chamber;
- and
- continually providing a second reactant to the reaction chamber,
- wherein a dose ratio of a dose of the second reactant to a dose of the second molybdenum precursor is between about 500 and about 500,000, and
- wherein the dose ratio is controlled by controlling a duration of pulses of the second molybdenum precursor.
Dependencies are inferred from the claim text.