Method for forming titanium nitride thin film and method for forming electrode

Abstract

A method for forming a titanium nitride thin film according to an embodiment of the present invention comprises the steps of: preparing a substrate; forming a titanium (Ti)-containing layer by spraying a precursor containing titanium (Ti) toward the substrate; and forming a titanium nitride thin film by spraying a reactant gas containing nitrogen (N) toward the substrate, wherein the precursor containing titanium (Ti) does not contain chlorine (Cl). Therefore, according to embodiments of the present invention, a titanium nitride thin film from which impurities are removed can be formed. Accordingly, the resistivity of the titanium nitride thin film can be lowered, and the electrical characteristics thereof can be improved.

Dependencies are inferred from the claim text.