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US 8,974,868 B2Granted
Post deposition plasma cleaning system and method
AssigneeTokyo Electron Limited
InventorsTadahiro Ishizaka, Audunn Ludviksson
Life of this patent
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Abstract
A method for processing a substrate includes disposing the substrate in a deposition chamber configured to perform a deposition process and depositing a film on the substrate using the deposition process. The substrate having the film thereon is then transferred from the deposition chamber into a treatment chamber and a plasma cleaning process is performed on the substrate in the treatment chamber. Further processing of the substrate is performed after the plasma cleaning process.
Claims24
A method for processing a substrate comprising:
- disposing said substrate in a deposition chamber configured to perform a deposition process using plasma, a power of the plasma being varied during the deposition process;
- depositing a film on said substrate using said deposition process by alternating providing a first process material into the deposition chamber while the plasma is generated with a first power and providing a second process material into the deposition chamber while not providing the first process material and while the plasma is generated with a second power higher than the first power;
- a first transferring step of transferring said substrate having the film thereon from the deposition chamber into a designated treatment chamber having a slotted plane antenna (SPA);
- performing a plasma cleaning process on said substrate in said designated treatment chamber;
- a second transferring step of transferring said substrate to an additional process chamber directly after said plasma cleaning;
- and
- performing further processing of said substrate in the additional process chamber.
4 more elements
A method for processing a substrate comprising:
- disposing said substrate in a plasma enhanced atomic layer deposition (PEALD) chamber configured to perform a PEALD process;
- depositing a film on said substrate using said PEALD process;
- transferring said substrate having the film thereon from the deposition chamber into a designated treatment chamber;
- performing a plasma cleaning process on said substrate in said designated treatment chamber having a slotted plane antenna (SPA);
- and
- performing further processing of said substrate after said plasma cleaning process, wherein said depositing a film comprises coupling of electromagnetic power of up to 600 W to the PEALD chamber to generate a first plasma while providing a first process material into the PEALD chamber, the first plasma reducing film contamination, and coupling electromagnetic power of more than 1000 W to the PEALD chamber to generate a second plasma while providing a second process material into the PEALD chamber and not providing the first process material into the PEALD chamber, the second plasma accelerating a reduction reaction process between the first process material and the second process material at a surface of said substrate, the first process material and the second process material being alternately provided into the PEALD chamber.
3 more elements
A method for processing a substrate comprising:
- disposing said substrate in a plasma enhanced atomic layer deposition (PEALD) chamber configured to perform a PEALD process;
- depositing a film on said substrate using said PEALD process;
- transferring said substrate having the film thereon from the deposition chamber into a treatment chamber;
- performing a plasma cleaning process on said substrate in said treatment chamber;
- transferring said substrate to an additional process chamber directly after said plasma cleaning;
- and
- performing further processing of said substrate after said plasma cleaning process, wherein said depositing a film comprises:
- coupling electromagnetic power to a substrate region electrode of the PEALD chamber to generate a substrate region plasma that ionizes contaminants substantially in a region of the substrate;
- and
- coupling electromagnetic power to a peripheral electrode of the PEALD chamber to generate peripheral plasma having a characteristic different from the substrate region plasma such that a potential attracts ionized contaminants from the region of the substrate to a peripheral region of the PEALD chamber.
7 more elements
A method for processing a substrate comprising:
- disposing said substrate in a deposition chamber configured to perform a deposition process using plasma, a power of the plasma being varied during the deposition process;
- depositing a film on said substrate using said deposition process by alternate provision of a first process material into the deposition chamber while the plasma is generated with a first power and provision of a second process material into the deposition chamber while the first process material is not provided and while the plasma is generated with a second power higher than the first power;
- transferring said substrate having the film thereon from the deposition chamber into an ionized physical vapor deposition (i-PVD) chamber;
- performing a plasma cleaning process on said substrate in said treatment ionized physical vapor deposition (i-PVD) chamber;
- and
- performing further processing of said substrate in said ionized physical vapor deposition (i-PVD) chamber after said plasma cleaning process.
3 more elements
Dependencies are inferred from the claim text.