C23C 16/301
Aiii bv compounds, where a is al, ga, in or tl and
Official title: {AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi}
C23C16/301 (Aiii bv compounds, where a is al, ga, in or tl and) appears on 558 US grants and 738 published applications in this corpus.
Search patents in C23C- Granted patents
- 558
- Published applications
- 738
- Assignees
- 338
- Inventors
- 1,539
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 2 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 7 | 0 |
| 1989 | 3 | 0 |
| 1990 | 7 | 0 |
| 1991 | 6 | 0 |
| 1992 | 6 | 0 |
| 1993 | 7 | 0 |
| 1994 | 6 | 0 |
| 1995 | 3 | 0 |
| 1996 | 2 | 0 |
| 1997 | 6 | 0 |
| 1998 | 4 | 0 |
| 1999 | 1 | 0 |
| 2000 | 9 | 0 |
| 2001 | 7 | 3 |
| 2002 | 12 | 24 |
| 2003 | 8 | 11 |
| 2004 | 11 | 12 |
| 2005 | 11 | 7 |
| 2006 | 7 | 21 |
| 2007 | 7 | 16 |
| 2008 | 7 | 15 |
| 2009 | 6 | 19 |
| 2010 | 12 | 31 |
| 2011 | 10 | 34 |
| 2012 | 20 | 49 |
| 2013 | 21 | 39 |
| 2014 | 34 | 27 |
| 2015 | 20 | 30 |
| 2016 | 19 | 31 |
| 2017 | 20 | 26 |
| 2018 | 17 | 44 |
| 2019 | 26 | 37 |
| 2020 | 22 | 41 |
| 2021 | 37 | 52 |
| 2022 | 29 | 53 |
| 2023 | 24 | 43 |
| 2024 | 36 | 33 |
| 2025 | 37 | 25 |
| 2026 | 21 | 15 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Coated cutting tool1 Sep 2026US 12,722,206 B2AB Sandvik Coromant
- Method and device for depositing a layer containing a group five element in a process chamber and subsequent cleaning of the process chamber1 Sep 2026US 12,723,309 B2Aixtron SE
- Semiconductor wafer processing tool with improved leak check14 Jul 2026US 12,685,071 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Wafer susceptor16 Jun 2026US 12,655,518 B2Enkris Semiconductor, Inc.
- Method of deposition in high aspect ratio (HAR) features2 Jun 2026US 12,648,386 B2Tokyo Electron Limited
- Semiconductor wafer processing tool with improved leak check8 Oct 2026US 2026/0314308 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming titanium nitride thin film and method for forming electrode24 Sep 2026US 2026/0286518 A1Jusung Engineering Co., Ltd.
- Method of deposition in high aspect ratio (har) features10 Sep 2026US 2026/0271645 A1Tokyo Electron Limited
- Film forming method and film forming apparatus3 Sep 2026US 2026/0258548 A1Tokyo Electron Limited
- Integrated substrate processing apparatus and method20 Aug 2026US 2026/0242952 A1Picosun Oy
Most cited
By later US patents
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Vapor growth apparatus and vapor growth method capable of growing good productivity560US 5,730,802 ASharp Kabushiki Kaisha · 1998
- Substrate holder for MOCVD536US 5,782,979 AMitsubishi Denki Kabushiki Kaisha · 1998
- Methods for depositing thin films comprising gallium nitride by atomic layer deposition472US 8,846,502 B2ASM IP Holding B. V. · 2014
- Method of manufracturing increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride471US 7,829,460 B2Globalfoundries Inc. · 2010