Method and device for depositing a layer containing a group five element in a process chamber and subsequent cleaning of the process chamber

A method for depositing a layer on a substrate (6) in a process chamber (2) arranged in a reactor housing (1) of a chemical vapor deposition (CVD) reactor, the method comprising:

• loading the substrate (6) into the process chamber (2);
• heating the process chamber (2) to a process temperature;
• feeding a process gas into the process chamber (2) comprising at least ASH3 or PH3, wherein at the process temperature, the process gas decomposes into decomposition products, and wherein the decomposition products are deposited as a layer on a first surface on the substrate (6) and are deposited as a parasitic coating on a second surface in the reactor housing (1);
• removing the substrate (6) from the process chamber (2);
• heating the process chamber (2) to a first cleaning temperature (T1) in a range between 800° C. and 900° C.;
• after the process chamber (2) has reached the first cleaning temperature (T1), feeding a Cl2 into the process chamber (2) in a first cleaning step (21);
• after the first cleaning step (21), bringing the process chamber (2) to a second cleaning temperature (T2);
• after the process chamber (2) has reached the second cleaning temperature (T2) in a range between 500° C. and 1100° C., feeding O2 into the process chamber (2) in a second cleaning step (22);
• after the second cleaning step (22), bringing the process chamber (2) to a third cleaning temperature (T3) in a range between 800° C. and 1000° C.;
• after the process chamber (2) has reached the third cleaning temperature (T3), feeding essentially only H2 into the process chamber (2) in a third cleaning step (23);
• and
• after the third cleaning step (23), cooling down the process chamber (2) during a cooling process (24).