B81C 2201/0177
Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, gaas-epitaxy
Official title: Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, GaAs-epitaxy
B81C2201/0177 (Epitaxy, i.e. homo-epitaxy, hetero-epitaxy, gaas-epitaxy) appears on 38 US grants and 48 published applications in this corpus.
Search patents in B81C- Granted patents
- 38
- Published applications
- 48
- Assignees
- 27
- Inventors
- 117
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 0 |
| 2002 | 1 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 3 |
| 2005 | 2 | 1 |
| 2006 | 1 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 1 | 0 |
| 2010 | 0 | 2 |
| 2011 | 3 | 1 |
| 2012 | 0 | 2 |
| 2013 | 1 | 1 |
| 2014 | 1 | 1 |
| 2015 | 0 | 0 |
| 2016 | 1 | 5 |
| 2017 | 3 | 3 |
| 2018 | 3 | 2 |
| 2019 | 3 | 1 |
| 2020 | 1 | 2 |
| 2021 | 0 | 2 |
| 2022 | 1 | 1 |
| 2023 | 0 | 4 |
| 2024 | 4 | 5 |
| 2025 | 0 | 6 |
| 2026 | 6 | 6 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- MEMS structure including a buried cavity with antistiction protuberances, and manufacturing methods thereof6 Oct 2026US 12,753,067 B2STMicroelectronics S,r.l.
- Anchor structure8 Sep 2026US 12,729,107 B2Lawrence Semiconductor Research Laboratory, Inc.
- Micro-electro-mechanical systems (MEMS) having vertical stops and anchor structures16 Jun 2026US 12,655,016 B2Lawrence Semiconductor Research Laboratory, Inc.
- Foundry-compatible process for integrated micro-speaker and microphone26 May 2026US 12,641,387 B2Vibrant Microsystems Inc.
- Method for manufacturing an integrated system including a capacitive pressure sensor and an inertial sensor, and integrated system17 Feb 2026US 12,552,665 B2STMicroelectronics S,r.l.
- Anchor structure1 Oct 2026US 2026/0296876 A1Lawrence Semiconductor Research Laboratory, Inc.
- Foundry-compatible process for integrated micro-speaker and microphone17 Sep 2026US 2026/0281642 A1Vibrant Microsystems Inc.
- Method for producing a silicon layer system with electrical connections27 Aug 2026US 2026/0250122 A1
- Engineered substrates, free-standing semiconductor microstructures, and related systems and methods23 Apr 2026US 2026/0109595 A1Lawrence Semiconductor Research Laboratory, Inc.
- Electromechanical microsystem in the form of a piezoelectric resonant membrane based on an alpha quartz layer, and process for the manufacturing thereof22 Jan 2026US 2026/0025122 A1Centre National De La Recherche Scientifique
Most cited
By later US patents
- Process for the production of accelerometers using silicon on insulator technology78US 5,576,250 ACommissariat A L' Energie Atomique · 1996
- Episeal pressure sensor and method for making an episeal pressure sensor68US 6,928,879 B2Robert Bosch GmbH · 2005
- Micromechanical device including N-type doping for providing temperature compensation and method of designing thereof34US 8,558,643 B2Teknologian tutkimuskeskus VTT Oy · 2013
- Accelerometers using silicon on insulator technology30US 5,780,885 ACommissariat A L' Energie Atomique · 1998
- Process for manufacturing buried channels and cavities in semiconductor material wafers28US 6,376,291 B1STMicroelectronics S,r.l. · 2002