Method for producing a silicon layer system with electrical connections

A method for producing a silicon layer system with electrical connections, comprising the following steps:

• a) providing a carrier substrate including a surface. wherein the carrier substrate is provided with an insulation layer formed on the surface;
• b) applying a first silicon layer to the insulation layer;
• c) structuring the first silicon layer to form trenches in the first silicon layer, wherein the trenches extend at least in places through the first silicon layer;
• d) passivating the first silicon layer, wherein the trenches are filled and a first passivation layer forms on a side of the first silicon layer facing away from the insulation layer;
• e) structuring the first passivation layer, wherein first sacrificial regions and functional regions form in the first silicon layer and the first sacrificial regions on the side of the first silicon layer facing away from the insulation layer are free of the first passivation layer at least in places;
• f) repeating steps b) to e) once or several times, wherein the applying is carried out in each case on a structured passivation layer thus forming and structuring further silicon layers and further passivation layers, as a result of which further sacrificial regions and further functional regions are created in the further silicon layers;
• and
• g) removing all of the first and further sacrificial regions after repeating steps b) to e) once or several times;
• wherein steps b) to f) are carried out in such a way that an electrical connection including at least one specialized functional region is configured by means of which an electrical contact between two elements inside and/or outside the silicon layer system can be established, wherein the at least one specialized functional region is used only for the electrical connection.