Anchor structure
AssigneeLawrence Semiconductor Research Laboratory, Inc.
InventorsBishnu Prasanna Gogoi, Chantal Arena
Life of this patent
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Abstract
A semiconductor device having one or more anchors configured to support a moving mass. The one or more anchors are formed in or on the semiconductor substrate and attached to the semiconductor substrate. An intermediate layer is formed overlying the semiconductor substrate. A device layer is formed overlying the intermediate layer. The device layer, the intermediate layer, and the semiconductor substrate are single crystal layers. The moving mass is formed in the device layer. The at least one anchor includes a dielectric material coupled to the semiconductor substrate. The moving mass couples to the at least one anchor. Portions of the intermediate layer are removed to free the moving mass in relation the semiconductor substrate.
Claims20
A method for forming at least one anchor coupled to a moving mass for a mechanical electrical mechanical system (MEMS) device, the method comprising:
- growing an intermediate layer by epitaxy to overlie a semiconductor substrate;
- growing a device layer by epitaxy to overlie the intermediate layer,
- wherein the semiconductor substrate, the intermediate layer, and the device layer are single crystal materials and wherein the intermediate layer and the device layer are relaxed;
- patterning a first mask layer;
- etching the device layer and the intermediate layer through a first mask layer patterned over the device layer to expose the semiconductor;
- depositing a dielectric layer in a trench below a surface of the semiconductor substrate;
- depositing a refill layer within a volume confined by the dielectric layer to form the at least one anchor that comprises the dielectric layer and the refill layer and that is coupled to the semiconductor substrate below the surface of the semiconductor substrate;
- and
- removing the refill layer, the dielectric layer, and the first mask layer to expose a surface of the device layer.
A method for forming at least one anchor coupled to a moving mass for a mechanical electrical mechanical system (MEMS) device, the method comprising:
- growing an intermediate layer that comprises SiGe to overlie a semiconductor substrate;
- forming a device layer overlying the intermediate layer and defining a moving mass moveable relative to the semiconductor substrate in a space devoid of the intermediate layer,
- wherein the semiconductor substrate and the device layer comprise silicon,
- wherein the semiconductor substrate, the intermediate layer, and the device layer are single crystal materials, and
- wherein the device layer and the intermediate layer are relaxed;
- and
- forming the at least one anchor in contact with the semiconductor substrate below a surface of the semiconductor substrate to support a movement of the moving mass.
Dependencies are inferred from the claim text.