Process for the production of accelerometers using silicon on insulator technology
AssigneeCommissariat a l'Energie Atomique
InventorsBernard Diem, Marie-Therese Delaye
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Abstract
A process for the production of accelerometers using the silicon on insulator method. The process comprises the following stages: a) producing a conductive monocrystalline silicon film on a silicon substrate and separated from the latter by an insulating layer; b) etching the silicon film and the insulating layer up to the substrate in order to fix the shape of the mobile elements and the measuring devices; c) producing electric contacts for the measuring devices; d) partial elimination of the insulating layer in order to free the mobile elements, the remainder of the insulating layer rendering integral the substrate and the moving elements.
Claims17
A process for the production of an integrated accelerometer having moving elements, the process comprising the steps of:
- (a) producing a monocrystalline silicon film on a silicon substrate and separated from the latter by an insulating layer;
- (b) etching the monocrystalline silicon film and insulating layer down to the substrate in order to form the moving elements having shape;
- and
- (c) removing portions of the insulating layer in order to separate the moving elements, the remainder of the insulating layer remains an integral part of the moving elements and the substrate.
Dependencies are inferred from the claim text.