Accelerometers using silicon on insulator technology
AssigneeCommissariat a l'Energie Atomique
InventorsBernard Diem, Marie-Therese Delaye
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Abstract
Process for the production of accelerometers using the silicon on insulator method. The process comprises the following stages: a) producing a conductive monocrystalline silicon film on a silicon substrate and separated from the latter by an insulating layer; b) etching the silicon film and the insulating layer up to the substrate in order to fix the shape of the mobile elements and the measuring device; c) producing electric contacts for the measuring devices; d) partial elimination of the insulating layer in order to free the mobile elements, the remainder of the insulating layer rendering integral the substrate and the moving elements.
Claims7
An accelerometer comprising:
- a monocrystalline silicon film;
- a silicon substrate;
- an insulating layer;
- and
- moving elements etched through said monocrystalline silicon film;
- said insulating layer separating the monocrystalline silicon film from the silicon substrate, and portions of the insulating film being removed in order to free the moving elements, wherein at least one first moving element of said monocrystalline silicon film has a sensitive axis perpendicular to the substrate and at least one second moving element of said monocrystalline silicon film has a sensitive axis parallel to the substrate.
An accelerometer comprising:
- a monocrystalline silicon film on a silicon substrate, said monocrystalline silicon film being separated from the silicon substrate by an insulating layer;
- and
- at least one first moving element having a sensitive axis perpendicular to the substrate and at least one second moving element having a sensitive axis parallel to the substrate.
Dependencies are inferred from the claim text.