B81B 2201/025
Inertial sensors not provided for in b81b2201/0235 - b81b2201/0242
Official title: Inertial sensors not provided for in B81B2201/0235 - B81B2201/0242
B81B2201/025 (Inertial sensors not provided for in b81b2201/0235 - b81b2201/0242) appears on 223 US grants and 243 published applications in this corpus.
Search patents in B81B- Granted patents
- 223
- Published applications
- 243
- Assignees
- 99
- Inventors
- 455
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 4 | 2 |
| 2002 | 2 | 4 |
| 2003 | 2 | 3 |
| 2004 | 7 | 7 |
| 2005 | 2 | 2 |
| 2006 | 6 | 4 |
| 2007 | 1 | 9 |
| 2008 | 5 | 5 |
| 2009 | 2 | 4 |
| 2010 | 6 | 10 |
| 2011 | 6 | 8 |
| 2012 | 11 | 19 |
| 2013 | 11 | 18 |
| 2014 | 16 | 13 |
| 2015 | 13 | 19 |
| 2016 | 20 | 16 |
| 2017 | 21 | 18 |
| 2018 | 16 | 15 |
| 2019 | 14 | 16 |
| 2020 | 7 | 8 |
| 2021 | 12 | 10 |
| 2022 | 11 | 13 |
| 2023 | 9 | 7 |
| 2024 | 6 | 6 |
| 2025 | 7 | 4 |
| 2026 | 5 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device18 Aug 2026US 12,709,537 B2Infineon Technologies AG
- Electronic device, electronic device manufacturing apparatus, and method for manufacturing electronic device11 Aug 2026US 12,703,622 B2Kabushiki Kaisha Toshiba
- Micro-electro-mechanical system (MEMS) device and fabrication method thereof19 May 2026US 12,630,416 B2Vanguard International Semiconductor Corporation
- Micromechanical sensor element5 May 2026US 12,617,671 B2Robert Bosch GmbH
- Package structure and method for manufacturing the same17 Feb 2026US 12,552,662 B2Murata Manufacturing Co., Ltd.
- Integrated device and manufacturing method thereof24 Sep 2026US 2026/0285673 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Anti-Stiction Process for Mems Device14 May 2026US 2026/0132019 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for manufacturing a vibratory mechanical inertial sensor, sensor obtained by such a method and inertial unit including such a sensor15 Jan 2026US 2026/0015224 A1Jxsens
- Physical Quantity Sensor, Physical Quantity Sensor Device, And Inertial Measurement Unit28 Aug 2025US 2025/0271462 A1Seiko Epson Corporation
- Microelectromechanical motion sensor device having a single proof mass5 Jun 2025US 2025/0178885 A1STMicroelectronics International N. V.
Most cited
By later US patents
- Integrated MEMS devices with controlled pressure environments by means of enclosed volumes68US 8,350,346 B1InvenSense, Inc. · 2013
- Method of making small gaps for small electrical/mechanical devices67US 6,197,610 B1Ball Semiconductor, Inc. · 2001
- MEMS integrated pressure sensor devices and methods of forming same66US 9,040,334 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Composite sensor device and method of producing the same64US 7,004,025 B2Murata Manufacturing Co., Ltd. · 2006
- Method for manufacturing semiconductor dynamic quantity sensor56US 6,287,885 B1Denso Corporation · 2001