Integrated device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsi-Cheng Hsu, Jui-Chun Weng, Shin-Hua Chen, Yu-Fan Lin, Ji-Hong Chiang
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Abstract
An integrated device includes a motion sensor and a pressure sensor. The motion sensor and the pressure sensor are disposed on the substrate and arranged side by side. The motion sensor and the pressure sensor are integrated into the integrated device, the monolithically integrated device including motion sensor and pressure sensor is realized. The present invention may not only scale down chip size by integrating a plurality of discrete devices, but also provide a prompt electrical signal transmission between the two sensors.
Claims20
An integrated device, comprising:
- a substrate;
- a motion sensor on the substrate;
- and
- a pressure sensor on the substrate;
- wherein the motion sensor and the pressure sensor share the substrate and arranged side by side.
A manufacturing method for an integrated device, comprising:
- providing a substrate;
- and
- simultaneously forming a motion sensor and a pressure sensor on the substrate, wherein the motion sensor and the pressure sensor share the substrate and arranged side by side;
- wherein forming the motion sensor and the pressure sensor on the substrate comprising:
- forming an insulation layer on the substrate, wherein the insulation layer has a first cavity of the motion sensor and a second cavity of the pressure sensor.
A manufacturing method for an integrated device, comprising:
- providing a substrate having a surface;
- and
- forming a motion sensor and a pressure sensor on the surface of the substrate, comprising:
- forming a first lower electrode and a second lower electrode on the surface of the substrate;
- forming a semiconductor layer above the substrate;
- patterning the semiconductor layer to form a first upper electrode and a second upper electrode;
- and
- forming a recess in the second upper electrode.
Dependencies are inferred from the claim text.