H10W 80/754
Having material changed during the connecting
Official title: {having material changed during the connecting}
H10W80/754 (Having material changed during the connecting) appears on 173 US grants and 217 published applications in this corpus.
Search patents in H10W- Granted patents
- 173
- Published applications
- 217
- Assignees
- 75
- Inventors
- 340
- Latest grant
- 4 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2005 | 0 | 2 |
| 2006 | 0 | 0 |
| 2007 | 1 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 1 | 4 |
| 2012 | 1 | 5 |
| 2013 | 3 | 8 |
| 2014 | 8 | 6 |
| 2015 | 5 | 13 |
| 2016 | 9 | 11 |
| 2017 | 7 | 20 |
| 2018 | 19 | 14 |
| 2019 | 18 | 13 |
| 2020 | 12 | 17 |
| 2021 | 10 | 18 |
| 2022 | 18 | 24 |
| 2023 | 21 | 25 |
| 2024 | 16 | 18 |
| 2025 | 19 | 13 |
| 2026 | 5 | 6 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Microelectronic assemblies with inductors in direct bonding regions4 Aug 2026US 12,701,724 B2Intel Corporation
- Semiconductor device and method of manufacturing semiconductor device4 Aug 2026US 12,701,810 B2Kioxia Corporation
- Via for semiconductor device connection9 Jun 2026US 12,653,020 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Stacked semiconductor device with connection pad disposed between connection pad shields26 May 2026US 12,641,905 B2OmniVision Technologies, Inc.
- Method of manufacturing a bonded substrate stack by surface activation19 May 2026US 12,635,548 B2Infineon Technologies AG
- Package structure18 Jun 2026US 2026/0173945 A1Advanced Semiconductor Engineering, Inc.
- Semiconductor devices with bonding structures and methods for forming the same30 Apr 2026US 2026/0123558 A1Yangtze Memory Technologies Co., Ltd.
- Multi-dies structure, multi-dies package structure and package structure9 Apr 2026US 2026/0101802 A1Changxin Memory Technologies, Inc.
- Hybrid wafer bonding method and structure thereof26 Mar 2026US 2026/0090437 A1Yangtze Memory Technologies Co., Ltd.
- Heterogeneous bonding structure and method forming same5 Mar 2026US 2026/0068689 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Three dimensional integrated circuit structures and hybrid bonding methods for semiconductor wafers256US 8,809,123 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Wafer-to-wafer bonding structure251US 9,941,243 B2Samsung Electronics Co., Ltd. · 2018
- Hybrid bond using a copper alloy for yield improvement249US 9,728,521 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Pad bonding employing a self-aligned plated liner for adhesion enhancement247US 8,482,132 B2International Business Machines Corporation · 2013
- Low temperature bonded structures178US 10,790,262 B2Invensas Bonding Technologies, Inc. · 2020