Stacked semiconductor device with connection pad disposed between connection pad shields

A stacked semiconductor device, comprising:

• a first semiconductor substrate and a second semiconductor substrate;
• an insulating medium disposed between the first semiconductor substrate and the second semiconductor substrate;
• a plurality of connection pads including a first connection pad and a second connection pad adjacent to the first connection pad, wherein the plurality of connection pads is disposed within the insulating medium and configured to provide one or more electrical connections extending between the first semiconductor substrate and the second semiconductor substrate;
• a first connection pad shield (CPS) structure and a second CPS structure, each disposed within the insulating medium, wherein the first connection pad is disposed between the first CPS structure and the second CPS structure, wherein the first CPS structure and the second CPS structure respectively form a first instance of a repeat pattern laterally surrounding the first connection pad, and wherein each other connection pad included in the plurality of connection pads is laterally surrounded by a corresponding instance of the repeat pattern;
• and
• a bonding interface located where a first insulating layer, included in the insulating medium, coupled to the first semiconductor substrate interfaces with a second insulating layer, included in the insulating medium, coupled to the second semiconductor substrate, wherein the first CPS structure extends from the bonding interface towards the first semiconductor substrate such that the first CPS structure directly contacts the second insulating layer at the bonding interface, and wherein the second CPS structure extends from the bonding interface towards the second semiconductor substrate such that the second CPS structure directly contacts the first insulating layer at the bonding interface.

An image sensor for imaging an external scene, the image sensor comprising:

• a first semiconductor substrate including a plurality of pixel cells, each disposed in or on the first semiconductor substrate and including at least one photodiode;
• a second semiconductor substrate including a pixel cell circuitry disposed in or on the second semiconductor substrate for pixel cell readout;
• and
• an insulating medium disposed between the first semiconductor substrate and the second semiconductor substrate, the insulating medium including:
• a plurality of connection pads including a first connection pad and a second connection pad adjacent to the first connection pad, wherein the plurality of connection pads is disposed within the insulating medium and configured to provide one or more electrical connections extending between the first semiconductor substrate and the second semiconductor substrate, wherein the pixel cell circuitry is coupled to the plurality of pixel cells via the plurality of connection pads;
• and
• a first connection pad shield (CPS) structure and a second CPS structure, each disposed within the insulating medium, wherein the first connection pad is disposed between the first CPS structure and the second CPS structure, and wherein the first CPS structure is directly coupled to the second CPS structure to laterally encapsulate the first connection pad within the insulating medium.