Microelectronic assemblies with inductors in direct bonding regions

A microelectronic assembly, comprising:

• a first microelectronic component;
• and
• a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region comprises at least part of a dielectric region of an inductor, and the dielectric region is between a conductive trace of the inductor and a magnetic region of the inductor.

A system comprising:

• a first die;
• and
• a second die coupled to the first die in a direct bonding region, wherein the direct bonding region comprises at least part of a conductive trace of an inductor, the direct bonding region further comprises at least part of a dielectric region of the inductor, and the dielectric region extends at least partially around the conductive trace.

A microelectronic assembly, comprising:

• a first microelectronic component;
• and
• a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region comprises at least part of a dielectric region of an inductor, and the dielectric region comprises aluminum and nitrogen.

A microelectronic assembly, comprising:

• a first microelectronic component;
• and
• a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region comprises at least part of a dielectric region of an inductor, and the dielectric region has a thickness between 0.1 microns and 2 microns.