H10W 72/07255
Changes in materials
Official title: {changes in materials}
H10W72/07255 (Changes in materials) appears on 546 US grants and 678 published applications in this corpus.
Search patents in H10W- Granted patents
- 546
- Published applications
- 678
- Assignees
- 176
- Inventors
- 1,116
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 2 |
| 2002 | 0 | 2 |
| 2003 | 4 | 0 |
| 2004 | 1 | 3 |
| 2005 | 1 | 4 |
| 2006 | 2 | 1 |
| 2007 | 2 | 6 |
| 2008 | 1 | 8 |
| 2009 | 7 | 15 |
| 2010 | 6 | 14 |
| 2011 | 7 | 16 |
| 2012 | 13 | 15 |
| 2013 | 20 | 35 |
| 2014 | 23 | 48 |
| 2015 | 35 | 50 |
| 2016 | 46 | 56 |
| 2017 | 54 | 60 |
| 2018 | 47 | 31 |
| 2019 | 46 | 52 |
| 2020 | 33 | 59 |
| 2021 | 41 | 47 |
| 2022 | 46 | 44 |
| 2023 | 38 | 38 |
| 2024 | 37 | 26 |
| 2025 | 20 | 28 |
| 2026 | 12 | 18 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Bonding scheme for semiconductor packaging18 Aug 2026US 12,713,957 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device, package structure and method of fabricating the same11 Aug 2026US 12,708,011 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Electronic device having a soldered joint between a metal region of a semiconductor die and a metal region of a substrate21 Jul 2026US 12,690,481 B2Infineon Technologies Austria AG
- Method for forming conductive bumps by performing a reflow process30 Jun 2026US 12,672,587 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Bonding through multi-shot laser reflow17 Mar 2026US 12,581,977 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Microelectronics package with hybrid connection to a substrate to enable reuse8 Oct 2026US 2026/0314461 A1NXP B. V.
- Microelectronic assemblies8 Oct 2026US 2026/0314496 A1Intel Corporation
- Method for forming conductive bumps by performing a reflow process24 Sep 2026US 2026/0293766 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Connection structure and semiconductor device comprising the same20 Aug 2026US 2026/0248014 A1Samsung Electronics Co., Ltd.
- Interconnect with low-temperature solder cap6 Aug 2026US 2026/0231807 A1Intel Corporation
Most cited
By later US patents
- Three-dimensional (3D) integrated circuit with enhanced copper-to-copper bonding214US 8,546,956 B2International Business Machines Corporation · 2013
- Structures and methods for low temperature bonding using nanoparticles162US 10,892,246 B2Invensas Corporation · 2021
- Nanowire bonding interconnect for fine-pitch microelectronics61US 11,387,202 B2Invensas Corporation · 2022
- Integrated electronic device having flip-chip connection with circuit board and fabrication method thereof61US 5,611,481 AFujitsu Limited · 1997
- Integrated system and method of making the integrated system56US 9,704,843 B2Infineon Technologies AG · 2017