Microelectronics package with hybrid connection to a substrate to enable reuse

A circuit device comprising:

• a circuit substrate including an active surface including one or more protrusions, each protrusion formed from a first material having a first melt temperature;
• a second material coated onto each of the one or more protrusions, the second material having a second melt temperature that is less than the first melt temperature;
• a semiconductor device die including one or more cavities, each cavity plated with a third material having a third melt temperature that is greater than the second melt temperature, the semiconductor device coupled to the one or more protrusions by an intermetallic connection formed by reflow of the second material;
• wherein the second melt temperature is within a first range of one hundred degrees Celsius to two hundred degrees Celsius;
• and
• wherein the first melt temperature is greater than two hundred degrees Celsius.

A method comprises:

• providing a circuit substrate including an active surface including one or more protrusions, each protrusion formed from a first material having a first melt temperature;
• coating each of the one or more protrusions with a second material having a second melt temperature that is less than the first melt temperature;
• pressing a semiconductor device die onto the circuit substrate to form a circuit assembly, the semiconductor device die including one or more cavities aligned with and sized to receive the one or more protrusions, each cavity plated with a third material having a third melt temperature that is greater than the second melt temperature;
• and
• heating the circuit assembly at a selected temperature that is greater than or equal to the second melt temperature and that is less than the first and third melt temperatures to reflow the second material to form an intermetallic connection between the circuit substrate and the semiconductor device die to form a circuit device;
• and
• wherein:
• the first material is selected from a group consisting of Copper, Gold, Tin, Nickel, Palladium, Aluminum, and a Copper alloy plated with one or more of Nickel, Palladium, Gold, and Tin;
• the second material is selected from a group consisting of Gallium, Indium, and Bismuth;
• and
• the third material is selected from a group consisting of Copper, Gold, Tin, Nickel, Palladium, Aluminum, and a Copper alloy plated with one or more of Nickel, Palladium, Gold, and Tin.