Method for forming conductive bumps by performing a reflow process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChao-Wei Chiu, Wei-Yu Chen, Chih-Chiang Tsao, Hao-Jan Pei, Hsiu-Jen Lin, Ching-Hua Hsieh
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Abstract
An electronic apparatus including a package substrate and a structure disposed on and electrically connected to the package substrate through conductive bumps is provided. The material of the conductive bumps includes a bismuth (Bi) containing alloy or an indium (In) containing alloy. In some embodiments, the bismuth (Bi) containing alloy includes Sn—Ag—Cu—Bi alloy. In some embodiments, a concentration of bismuth (Bi) contained in the Sn—Ag—Cu—Bi alloy ranges from about 1 wt % to about 10 wt %. Methods for forming the Sn—Ag—Cu—Bi alloy are also provided.
Claims20
A method, comprising:
- providing a package substrate comprising first conductive pads;
- forming alloy patterns comprising Sn and Cu on the first conductive pads respectively;
- providing a structure comprising second conductive pads;
- forming alloy patterns comprising Sn and Ag on the second conductive pads respectively;
- forming alloy patterns comprising Sn and X on the alloy patterns comprising Sn and Ag, wherein X represents bismuth or indium;
- bonding the alloy patterns comprising Sn and X and the alloy patterns comprising Sn and Cu under a first temperature, wherein the alloy patterns comprising Sn and Ag, the alloy patterns comprising Sn and X and the alloy patterns comprising Sn and Cu remain solid state during bonding the alloy patterns comprising Sn and X and the alloy patterns comprising Sn and Cu;
- and
- performing a reflow process under a second temperature to form conductive bumps between the first conductive pads and the second conductive pads, wherein the second temperature is higher than the first temperature.
A method, comprising:
- providing a package substrate comprising first conductive pads;
- forming alloy patterns comprising Sn and X on the first conductive pads respectively, wherein X represents bismuth or indium;
- providing a structure comprising second conductive pads;
- forming alloy patterns comprising Sn and Ag on the second conductive pads respectively;
- bonding the alloy patterns comprising Sn and X and the alloy patterns comprising Sn and Ag under a first temperature, wherein the alloy patterns comprising Sn and X and the alloy patterns comprising Sn and Ag remain solid state during bonding the alloy patterns comprising Sn and X and the alloy patterns comprising Sn and Ag;
- and
- performing a reflow process under a second temperature to form conductive bumps between the first conductive pads and the second conductive pads, wherein the second temperature is higher than the first temperature.
A method, comprising:
- forming Sn—Cu alloy patterns on first conductive pads of a first structure;
- forming Sn—Ag alloy patterns on second conductive pads of a second structure;
- forming Sn—X alloy patterns on the Sn—Ag alloy patterns, wherein X represents bismuth or indium;
- pre-heating the Sn—X alloy patterns and the Sn—Cu alloy patterns under a first temperature, wherein the Sn—X alloy patterns remain solid state during pre-heating the Sn—X alloy patterns and the Sn—Cu alloy patterns;
- and
- performing a reflow process under a second temperature to form conductive bumps between the first conductive pads and the second conductive pads, wherein the second temperature is higher than the first temperature.
Dependencies are inferred from the claim text.