H10W 20/0425
Comprising multiple stacked seed or nucleation layers
Official title: {comprising multiple stacked seed or nucleation layers}
H10W20/0425 (Comprising multiple stacked seed or nucleation layers) appears on 347 US grants and 357 published applications in this corpus.
Search patents in H10W- Granted patents
- 347
- Published applications
- 357
- Assignees
- 106
- Inventors
- 635
- Latest grant
- 3 Jun 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 2 | 0 |
| 1998 | 0 | 0 |
| 1999 | 2 | 0 |
| 2000 | 9 | 0 |
| 2001 | 20 | 9 |
| 2002 | 36 | 26 |
| 2003 | 31 | 33 |
| 2004 | 24 | 25 |
| 2005 | 27 | 34 |
| 2006 | 15 | 21 |
| 2007 | 14 | 24 |
| 2008 | 15 | 27 |
| 2009 | 13 | 25 |
| 2010 | 19 | 23 |
| 2011 | 18 | 18 |
| 2012 | 19 | 16 |
| 2013 | 10 | 9 |
| 2014 | 17 | 17 |
| 2015 | 8 | 13 |
| 2016 | 7 | 8 |
| 2017 | 10 | 3 |
| 2018 | 6 | 9 |
| 2019 | 8 | 4 |
| 2020 | 5 | 4 |
| 2021 | 3 | 2 |
| 2022 | 2 | 3 |
| 2023 | 3 | 3 |
| 2024 | 2 | 1 |
| 2025 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Integrated circuit devices and methods of manufacturing the same3 Jun 2025US 12,322,745 B2Samsung Electronics Co., Ltd.
- Doped selective metal caps to improve copper electromigration with ruthenium liner21 May 2024US 11,990,368 B2APPLIED Materials.Inc.
- Integrated circuit devices and methods of manufacturing the same12 Mar 2024US 11,929,393 B2Samsung Electronics Co., Ltd.
- Method for fabricating conductive feature and semiconductor device12 Dec 2023US 11,842,925 B2Nanya Technology Corporation
- Integrated circuit devices and methods of manufacturing the same31 Jan 2023US 11,569,344 B2Samsung Electronics Co., Ltd.
- Integrated circuit devices and methods of manufacturing the same6 Jun 2024US 2024/0186369 A1Samsung Electronics Co., Ltd.
- Method for fabricating conductive feature and semiconductor device20 Jul 2023US 2023/0230879 A1Nanya Technology Corporation
- Integrated circuit devices and methods of manufacturing the same25 May 2023US 2023/0163164 A1Samsung Electronics Co., Ltd.
- Method of depositing layers20 Apr 2023US 2023/0122969 A1APPLIED Materials.Inc.
- Doped selective metal caps to improve copper electromigration with ruthenium liner20 Oct 2022US 2022/0336271 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003
- Use of cobalt tungsten phosphide as a barrier material for copper metallization608US 5,695,810 ACornell Research Foundation, Inc. · 1997
- Seed layer deposition558US 6,824,665 B2Shipley Company, L.L.C. · 2004
- Chip interconnect and packaging deposition methods and structures556US 7,147,766 B2ASM Nutool, Inc. · 2006
- Metal nitride carbide deposition by ALD502US 7,410,666 B2ASM International N.V. · 2008