Method of depositing layers
AssigneeApplied Materials, Inc.
InventorsShirish PETHE, Fuhong ZHANG, Joung Joo LEE, Rui LI, Xiangjin XIE, Xianmin TANG
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Abstract
Embodiments disclosed herein generally relate to methods of depositing a plurality of layers. A doped copper seed layer is deposited in a plurality of feature definitions in a device structure. A first copper seed layer is deposited and then the first copper seed layer is doped to form a doped copper seed layer, or a doped copper seed layer is deposited directly. The doped copper seed layer leads to increased flowability, reducing poor step coverage, overhang, and voids in the copper layer.
Claims20
A method for depositing a plurality of layers, comprising:
- depositing a doped copper seed layer having one or more seed layer portions over a device structure, the doped copper seed layer comprising copper (Cu) and a dopant, the device structure comprising a layer disposed over a substrate, the layer having a surface and a plurality of feature definitions, each of the feature definitions having a plurality of side walls and a bottom, wherein the doped copper seed layer is deposited such that the doped copper seed layer is disposed over the surface, the plurality of side walls and the bottom;
- and
- etching back the doped copper seed layer such that at least one of the one or more seed layer portions is removed.
A method for depositing a plurality of layers, comprising:
- depositing a doped copper seed layer having one or more seed layer portions over a device structure, the doped copper seed layer comprising copper (Cu) and a dopant, the device structure comprising a layer disposed over a substrate, the layer having a surface and a plurality of feature definitions, each of the feature definitions having a plurality of side walls and a bottom;
- and
- etching back the doped copper seed layer such that at least one of the one or more seed layer portions is removed, wherein:
- the doped copper seed layer is disposed over the surface, the plurality of side walls and the bottom,
- the depositing the doped copper seed layer comprises a physical vapor deposition (PVD) process, and
- the dopant comprises tantalum (Ta).
A method for depositing a plurality of layers, comprising
- depositing a doped copper seed layer having one or more seed layer portions over a device structure, wherein the doped copper seed layer comprises a material removed from a target during a physical vapor deposition process (PVD);
- and
- etching back the doped copper seed layer such that at least one of the one or more seed layer portions is removed.
Dependencies are inferred from the claim text.