Method for fabricating conductive feature and semiconductor device
AssigneeNanya Technology Corporation
InventorsCHE-HSIEN LIAO, YU-CHANG CHANG
Life of this patent
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Abstract
The present application discloses method for fabricating a conductive feature and a method for fabricating a semiconductor device. The method includes providing a substrate; forming a recess in the substrate; conformally forming a first nucleation layer in the recess; performing a post-treatment to the first nucleation layer; and forming a first bulk layer on the first nucleation layer to fill the recess. The first nucleation layer and the first bulk layer configure the conductive feature. The first nucleation layer and the first bulk layer include tungsten. The post-treatment includes a borane-containing reducing agent.
Claims18
A method for fabricating a conductive feature of a semiconductor device, comprising:
- providing a substrate;
- forming a recess in the substrate;
- conformally forming a first nucleation layer in the recess;
- performing a post-treatment to the first nucleation layer;
- and
- forming a first bulk layer on the first nucleation layer to fill the recess;
- wherein the first nucleation layer and the first bulk layer configure the conductive feature;
- wherein the first nucleation layer and the first bulk layer comprise tungsten;
- wherein the post-treatment comprises a borane-containing reducing agent.
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a word line trench in the substrate;
- conformally forming a first insulating layer in the word line trench and conformally forming a first barrier layer on the first insulating layer;
- conformally forming a first nucleation layer on the first barrier layer;
- performing a post-treatment to the first nucleation layer, wherein the post-treatment comprises a reducing agent comprising diborane;
- forming a first bulk layer on the first nucleation layer, wherein the first nucleation layer and the first bulk layer configure a first conductive layer;
- and
- performing a planarization process to turn the first insulating layer, the first barrier layer, and the first conductive layer into a word line insulating layer, a word line barrier layer, and a word line conductive layer, respectively and correspondingly, wherein the word line insulating layer, the word line barrier layer, and the word line conductive layer configure a word line structure;
- wherein the first nucleation layer and the first bulk layer comprise tungsten.
Dependencies are inferred from the claim text.