Integrated circuit devices and methods of manufacturing the same

An integrated circuit device comprising a capacitor structure, wherein the capacitor structure comprises:

• a landing pad over a substrate;
• a bottom electrode comprising a bottom surface in contact with a top surface of the landing pad;
• a supporter on a sidewall of the bottom electrode;
• a dielectric layer on the bottom electrode and the supporter;
• and
• a top electrode on the dielectric layer to cover the bottom electrode,
• wherein the bottom electrode comprises a base electrode layer comprising niobium nitride and extending in a first direction that is perpendicular to a top surface of the substrate, and
• wherein a portion of the dielectric layer in contact with the base electrode layer comprises hafnium oxide having a tetragonal crystal phase.

An integrated circuit device comprising a capacitor structure, wherein the capacitor structure comprises:

• a bottom electrode over a substrate;
• a supporter on a sidewall of the bottom electrode;
• a dielectric layer on the bottom electrode and the supporter;
• and
• a top electrode on the dielectric layer and covering the bottom electrode,
• wherein the bottom electrode comprises:
• a first base electrode layer comprising niobium nitride and extending in a first direction that is perpendicular to a top surface of the substrate;
• a second base electrode layer over the first base electrode layer and spaced apart from the first base electrode layer in the first direction;
• and
• a seed layer between the first base electrode layer and the second base electrode layer, the seed layer surrounded by the supporter and having a first sidewall coplanar with the dielectric layer and coplanar with the first base electrode layer.