H10P 70/54
Cleaning of wafer edges
Official title: {Cleaning of wafer edges}
H10P70/54 (Cleaning of wafer edges) appears on 313 US grants and 449 published applications in this corpus.
Search patents in H10P- Granted patents
- 313
- Published applications
- 449
- Assignees
- 117
- Inventors
- 881
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 2 | 0 |
| 2000 | 2 | 0 |
| 2001 | 4 | 4 |
| 2002 | 3 | 3 |
| 2003 | 5 | 11 |
| 2004 | 8 | 12 |
| 2005 | 7 | 12 |
| 2006 | 1 | 19 |
| 2007 | 9 | 24 |
| 2008 | 8 | 25 |
| 2009 | 4 | 26 |
| 2010 | 9 | 14 |
| 2011 | 13 | 14 |
| 2012 | 12 | 14 |
| 2013 | 18 | 15 |
| 2014 | 16 | 23 |
| 2015 | 8 | 20 |
| 2016 | 11 | 10 |
| 2017 | 22 | 20 |
| 2018 | 8 | 23 |
| 2019 | 17 | 12 |
| 2020 | 20 | 30 |
| 2021 | 19 | 32 |
| 2022 | 19 | 26 |
| 2023 | 20 | 24 |
| 2024 | 14 | 17 |
| 2025 | 23 | 11 |
| 2026 | 10 | 8 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Point of use solvent mixing for film removal11 Aug 2026US 12,704,785 B2Tokyo Electron Limited
- Treatment liquid for semiconductor wafers, which contains hypochlorite ions28 Apr 2026US 12,612,580 B2Tokuyama Corporation
- Substrate processing system and substrate processing method21 Apr 2026US 12,610,770 B2SCREEN Holdings Co., Ltd.
- Apparatus for treating substrate including first substrate treating apparatus and transfer system3 Mar 2026US 12,566,378 B2Semes Co., Ltd.
- Substrate processing apparatus and method thereof3 Feb 2026US 12,541,150 B2Semes Co., Ltd.
- Substrate processing method and substrate processing apparatus23 Jul 2026US 2026/0215187 A1Tokyo Electron Limited
- Wafer backside deposition cleaning23 Jul 2026US 2026/0215197 A1APPLIED Materials.Inc.
- Laser cleaning apparatus and laser cleaning method thereof23 Jul 2026US 2026/0215204 A1MainType Opto-Electronics Technology Co., LTD.
- Substrate processing method and substrate processing apparatus11 Jun 2026US 2026/0165077 A1Tokyo Electron Limited
- Method for manufacturing wafer14 May 2026US 2026/0136864 A1SK Siltron Co., Ltd.
Most cited
By later US patents
- Low temperature system and method for CVD copper removal383US 5,897,379 ASharp Kabushiki Kaisha · 1999
- Method and apparatus for selective removal of material from wafer alignment marks66US 6,103,636 AMicron Technology, Inc. · 2000
- Method of forming a copper oxide film to etch a copper surface evenly53US 6,261,953 B1Kabushiki Kaisha Toshiba · 2001
- Methods of reducing metal residue in edge bead region from metal-containing resists43US 10,627,719 B2Inpria Corporation · 2020
- Process and apparatus for full wafer deposition36US 5,384,008 AAPPLIED Materials.Inc. · 1995