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US 2026/0215187 A1Published application
Substrate processing method and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorHitoshi KOSUGI
Life of this patent
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Abstract
A substrate processing method includes treating a surface of a metallic film that includes ruthenium with a first processing liquid to form a metal chloride on a surface of the metallic film, and removing the metal chloride with a second processing liquid.
Claims10
A substrate processing method, including:
- treating a surface of a metallic film that includes ruthenium with a first processing liquid to form a metal chloride on a surface of the metallic film;
- and
- removing the metal chloride with a second processing liquid.
A substrate processing apparatus, comprising:
- a holding unit that holds and rotates a substrate where a metallic film that includes ruthenium is formed;
- a liquid supply unit that supplies a processing liquid to the substrate that is held by the holding unit;
- and
- a controller that controls at least the holding unit and the liquid supply unit, wherein
- the controller is configured to treat a surface of the metallic film with a first processing liquid to form a metal chloride on a surface of the metallic film, and remove the metal chloride with a second processing liquid.
2 more elements
Dependencies are inferred from the claim text.