Substrate processing apparatus and method thereof

A substrate processing apparatus, comprising:

• a support configured to rotate a substrate;
• a first bath installed around the support and configured to store a first cleaning liquid and form a first opening on an upper surface thereof;
• a first ultrasonic oscillator installed on a bottom surface of the first bath and configured to provide an ultrasonic wave towards a surface of the cleaning liquid exposed by the first opening and form a first water film protruding from the surface of the first cleaning liquid;
• a first nozzle disposed on an upper part of the first bath to be inclined towards an edge region of the substrate and configured to spray a cleaning gas to an upper surface of the edge region of the substrate;
• a second bath spaced apart from the first bath around the support and configured to store a second cleaning liquid and form a second opening on an upper surface thereof;
• a second ultrasonic oscillator installed on a bottom surface of the second bath and configured to provide the ultrasonic wave towards a surface of the second cleaning liquid exposed by the second opening and form a second water film protruding from the surface of the second cleaning liquid;
• and
• a second nozzle disposed on an upper part of the second bath to be inclined towards the edge region of the substrate and configured spray the cleaning gas to the upper surface of the edge region of the substrate,
• wherein uppermost parts of the first and second baths are located below the substrate such that the substrate is not immersed in the first bath and the second bath, and the edge region of the substrate is cleaned by the protruding first and second water films while rotating the substrate by the support.