Point of use solvent mixing for film removal
AssigneeTokyo Electron Limited
InventorsLior Huli, Corey Lemley
Life of this patent
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Abstract
A method of processing a wafer that includes: positioning the wafer within a processing chamber, the wafer including a film deposited over a surface of the wafer; rotating the wafer within the processing chamber; mixing a first fluid with a second fluid at a mixing ratio using a dispense nozzle assembly resulting in a fluid mixture; and while rotating the wafer, dispensing the fluid mixture from the dispense nozzle assembly over an edge portion of the wafer to remove a portion of the film on the edge portion of the wafer.
Claims18
A method of processing a wafer, the method comprising:
- positioning the wafer within a processing chamber, the wafer comprising a film deposited over a surface of the wafer;
- rotating the wafer within the processing chamber;
- during the processing of the wafer, mixing a first fluid with a second fluid at a mixing ratio at a mixing chamber of a dispense nozzle assembly resulting in a fluid mixture;
- and
- while rotating the wafer, dispensing the fluid mixture from the mixing chamber of the dispense nozzle assembly over an edge portion of the wafer through a dispensing nozzle coupled to the mixing chamber, the dispensing removing a portion of the film on the edge portion of the wafer, while dispensing the fluid mixture, changing the mixing ratio based on a surface topology of the film on the edge portion of the wafer.
A method of processing a wafer, the method comprising:
- performing a spin-on process to deposit a photoresist film over the wafer;
- rotating the wafer in a processing chamber;
- positioning a dispense nozzle assembly over an edge portion of the wafer, the dispense nozzle assembly comprising a mixing chamber and a dispense nozzle;
- supplying a first fluid to the mixing chamber through a first supply line at a first flow rate;
- supplying a second fluid to the mixing chamber through a second supply line at a second flow rate;
- mixing the first fluid with the second fluid at a mixing ratio within the mixing chamber to form a fluid mixture, the mixing ratio being a volumetric ratio of the first fluid to the second fluid;
- and
- while rotating the wafer, dispensing the fluid mixture using the dispense nozzle over an edge portion of the wafer to remove a portion of the photoresist film on the edge portion of the wafer, while dispensing the fluid mixture, changing the mixing ratio by dynamically controlling the first flow rate and the second flow rate independent of each other.
A method of processing a wafer, the method comprising:
- positioning the wafer within a processing chamber, the wafer comprising a film deposited over a surface of the wafer;
- rotating the wafer within the processing chamber;
- determining a mixing ratio for a first fluid and a second fluid based on an EBR process recipe, the EBR process recipe comprising at least one parameter selected from a solvent system, a mixing ratio, a spin speed, a dispense rate, a temperature, and a position of a dispensing nozzle;
- mixing the first fluid with the second fluid at the determined mixing ratio in a mixing chamber of a dispense nozzle assembly to form a fluid mixture;
- and
- while rotating the wafer, dispensing the fluid mixture from a dispensing nozzle of the dispense nozzle assembly over an edge portion of the wafer to remove a portion of the film on the edge portion of the wafer, the fluid supplied to the dispensing nozzle from the mixing chamber.
Dependencies are inferred from the claim text.