H10P 50/71
Etching of wafers, substrates or parts of devices: using masks for conductive
Official title: {using masks for conductive or resistive materials}
H10P50/71 (Etching of wafers, substrates or parts of devices: using masks for conductive) appears on 3,991 US grants and 4,202 published applications in this corpus.
Search patents in H10P- Granted patents
- 3,991
- Published applications
- 4,202
- Assignees
- 586
- Inventors
- 7,522
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 3 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 5 | 0 |
| 1991 | 13 | 0 |
| 1992 | 12 | 0 |
| 1993 | 33 | 0 |
| 1994 | 21 | 0 |
| 1995 | 22 | 0 |
| 1996 | 9 | 0 |
| 1997 | 26 | 0 |
| 1998 | 26 | 0 |
| 1999 | 53 | 0 |
| 2000 | 78 | 0 |
| 2001 | 98 | 31 |
| 2002 | 94 | 84 |
| 2003 | 101 | 96 |
| 2004 | 108 | 131 |
| 2005 | 81 | 121 |
| 2006 | 98 | 136 |
| 2007 | 85 | 136 |
| 2008 | 77 | 162 |
| 2009 | 93 | 134 |
| 2010 | 125 | 136 |
| 2011 | 123 | 103 |
| 2012 | 118 | 119 |
| 2013 | 118 | 127 |
| 2014 | 142 | 150 |
| 2015 | 162 | 286 |
| 2016 | 292 | 301 |
| 2017 | 257 | 208 |
| 2018 | 185 | 185 |
| 2019 | 220 | 251 |
| 2020 | 219 | 240 |
| 2021 | 195 | 181 |
| 2022 | 153 | 201 |
| 2023 | 123 | 195 |
| 2024 | 147 | 200 |
| 2025 | 177 | 180 |
| 2026 | 88 | 108 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device, semiconductor structure and method for fabricating semiconductor device and semiconductor structure using tilted etch process6 Oct 2026US 12,757,661 B2Nanya Technology Corporation
- Semiconductor photoresist composition and method of forming patterns using the composition29 Sep 2026US 12,748,348 B2Samsung SDI.Co., Ltd.
- Fabricating of a quantum device with autoalignment of the gates on their respective active zone region15 Sep 2026US 12,740,105 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Method of fine pitch pattering for semiconductor device and method of manufacturing the same15 Sep 2026US 12,740,358 B2Samsung Electronics Co., Ltd.
- Underlayer compound for photolithography, multilayered structure formed using the same, and method for manufacturing semiconductor devices using the same1 Sep 2026US 12,724,346 B2Inha University Research and Business Foundation
- Methods and systems for dry etching8 Oct 2026US 2026/0314324 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Photoresist having strengthening material8 Oct 2026US 2026/0314339 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method of forming pattern and method of manufacturing semiconductor device1 Oct 2026US 2026/0305268 A1Samsung Electronics Co., Ltd.
- Photoresist composition and method for manufacturing semiconductor device using the same24 Sep 2026US 2026/0288005 A1Samsung Electronics Co., Ltd.
- Apparatus and method for manufacturing semiconductor device and apparatus and method for setting processing conditions used in manufacturing the same24 Sep 2026US 2026/0288108 A1Kioxia Corporation
Most cited
By later US patents
- Frequency doubling using spacer mask774US 7,807,578 B2APPLIED Materials.Inc. · 2010
- Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures742US 7,611,980 B2Micron Technology, Inc. · 2009
- Dry etching by alternately etching and depositing567US 4,985,114 AHitachi, Ltd. · 1991
- Semiconductor substrate process using a low temperature deposited carbon-containing hard mask566US 7,323,401 B2APPLIED Materials.Inc. · 2008
- Mask material conversion555US 7,910,288 B2Micron Technology, Inc. · 2011