Method of forming pattern and method of manufacturing semiconductor device

A method of forming a pattern, the method comprising:

• forming a resist pattern comprising a metal oxide, on a substrate;
• forming spacers on sidewalls of the resist pattern;
• forming a preliminary metal oxide layer to cover the spacers by coating the resist pattern and the spacers with a precursor, the precursor being in a state of one of a solution, a sol, or a gel;
• solidifying the preliminary metal oxide layer to form a metal oxide layer;
• and
• recessing the metal oxide layer to form a metal oxide pattern exposing a top surface of the resist pattern,
• wherein the metal oxide pattern is laterally spaced apart from the resist pattern, and
• a metal content in the metal oxide pattern is less than a metal content in the resist pattern.

A method of forming a pattern, the method comprising:

• forming an etching target layer on a substrate;
• forming an upper layer on the etching target layer;
• forming resist patterns including a metal oxide, on the upper layer;
• performing a coating process using a precursor in a solution, sol, or gel state to form a preliminary metal oxide layer between the resist patterns;
• solidifying the preliminary metal oxide layer to form a metal oxide layer;
• removing the metal oxide layer on top surfaces of the resist patterns to form a metal oxide pattern;
• and
• performing an etching process using the resist patterns and the metal oxide pattern as an etching mask.