Photoresist composition and method for manufacturing semiconductor device using the same

A photoresist composition comprising:

• a photosensitive polymer including:
• a first repetition unit represented by any one of chemical formula 1a, chemical formula 1b, and chemical formula 1c, wherein each chemical formula of the chemical formula 1a, the chemical formula 1b, and the chemical formula 1c contains an ester bond;
• and
• a second repetition unit represented by chemical formula 2;
• a photoacid generator;
• and
• a solvent,
• wherein the chemical formula 1a is
• wherein the chemical formula 1b is
• wherein the chemical formula 1c is
• wherein the chemical formula 2 is
• wherein R1a is a trivalent linking group having 1 to 20 carbon atoms,
• wherein each of R1b, R2b, and R3b is an independent divalent linking group having 3 to 20 carbon atoms including a tertiary carbon directly bonded to an oxygen atom of the ester bond,
• wherein R1c is a single bond or a divalent linking group having 1 to 20 carbon atoms, wherein each of R2a and R3a is independently a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 10 carbon atoms, a substituted or unsubstituted alkynyl group having 2 to 10 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 3 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 5 to 18 carbon atoms, a substituted or unsubstituted aryl alkyl group having 6 to 18 carbon atoms, or a halogen atom, and
• wherein R4 is an aryl group having 6 to 30 carbon atoms including at least one selected from a hydroxyl group and an alkoxy group having 1 to 5 carbon atoms.

A method for manufacturing a semiconductor device, the method comprising:

• sequentially forming a target film and a photoresist film on a substrate;
• performing an exposure process on the photoresist film;
• performing a development process on the photoresist film to form a photoresist pattern;
• and
• performing an etching process on the target film by using the photoresist pattern as an etching mask,
• wherein the photoresist film includes a photosensitive polymer including a first repetition unit represented by any one of chemical formula 1a, chemical formula 1b, and chemical formula 1c, and each chemical formula of the chemical formula 1a, the chemical formula 1b, and the chemical formula 1c includes an ester bond,
• wherein the chemical formula 1a is
• wherein the chemical formula 1b is
• wherein the chemical formula 1c is
• wherein R1a is a trivalent linking group having 1 to 20 carbon atoms,
• wherein each of R1b, R2b, and R3b is an independent divalent linking group having 3 to 20 carbon atoms including a tertiary carbon directly bonded to an oxygen atoms of the ester bond,
• wherein R1c is a single bond or a divalent linking group having 1 to 20 carbon atoms, and
• wherein each of R2a and R3a is independently a hydrogen atom, a hydroxyl group, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 10 carbon atoms, a substituted or unsubstituted alkynyl group having 2 to 10 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 3 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 20 carbon atoms, a substituted or unsubstituted aryl group having 5 to 18 carbon atoms, a substituted or unsubstituted aryl alkyl group having 6 to 18 carbon atoms, or a halogen atom.