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US 2026/0314339 A1Published application
Photoresist having strengthening material
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYuan-Chih LO, Shi-Cheng WANG, Cheng-Han WU, Ching-Yu CHANG
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Abstract
A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, exposing the photoresist layer to an EUV radiation, developing the photoresist layer to form a patterned photoresist, forming a coating layer on the patterned photoresist, and after forming the coating layer on the patterned photoresist, etching the substrate using a combination of the coating layer and the patterned photoresist as an etching mask.
Claims20
A method, comprising:
- spin coating a photoresist layer over a target layer;
- patterning the photoresist layer;
- after patterning the photoresist layer, diffusing a photoresist-strengthening material into the photoresist layer, wherein diffusing the photoresist-strengthening material comprises diffusing the photoresist-strengthening material in a liquid state;
- performing a hardening treatment to the photoresist layer and the photoresist-strengthening material;
- and
- performing an etch process or an implantation process to the target layer using a combination of the photoresist layer and the photoresist-strengthening material.
3 more elements
A method, comprising:
- spin coating a photoresist layer over a target layer;
- patterning the photoresist layer;
- forming a metal-containing material extending along opposite sidewalls and a top surface of the photoresist layer;
- hardening the metal-containing material to leave the hardened metal-containing material along the opposite sidewalls and the top surface of the photoresist layer;
- and
- performing an etch process or an implantation process to the target layer using a combination of the photoresist layer and the photoresist-strengthening material.
3 more elements
A method, comprising:
- spin coating a photoresist layer over a target layer;
- patterning the photoresist layer;
- reducing a surface roughness of the photoresist layer by solution-coating a coating layer over the photoresist layer;
- and
- performing an etch process or an implantation process to the target layer using a combination of the photoresist layer and the coating layer.
2 more elements
Dependencies are inferred from the claim text.