H10P 50/695
Characterised by the process involved to create the mask
Official title: {characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask}
H10P50/695 (Characterised by the process involved to create the mask) appears on 2,847 US grants and 3,133 published applications in this corpus.
Search patents in H10P- Granted patents
- 2,847
- Published applications
- 3,133
- Assignees
- 482
- Inventors
- 4,914
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 6 | 0 |
| 1986 | 3 | 0 |
| 1987 | 8 | 0 |
| 1988 | 5 | 0 |
| 1989 | 4 | 0 |
| 1990 | 6 | 0 |
| 1991 | 6 | 0 |
| 1992 | 7 | 0 |
| 1993 | 8 | 0 |
| 1994 | 9 | 0 |
| 1995 | 10 | 0 |
| 1996 | 4 | 0 |
| 1997 | 13 | 0 |
| 1998 | 7 | 0 |
| 1999 | 14 | 0 |
| 2000 | 11 | 0 |
| 2001 | 20 | 5 |
| 2002 | 16 | 19 |
| 2003 | 12 | 24 |
| 2004 | 21 | 34 |
| 2005 | 25 | 36 |
| 2006 | 31 | 45 |
| 2007 | 18 | 52 |
| 2008 | 27 | 73 |
| 2009 | 27 | 52 |
| 2010 | 57 | 72 |
| 2011 | 57 | 58 |
| 2012 | 61 | 82 |
| 2013 | 66 | 86 |
| 2014 | 106 | 158 |
| 2015 | 187 | 271 |
| 2016 | 252 | 264 |
| 2017 | 225 | 224 |
| 2018 | 212 | 194 |
| 2019 | 250 | 260 |
| 2020 | 245 | 248 |
| 2021 | 185 | 181 |
| 2022 | 132 | 164 |
| 2023 | 136 | 181 |
| 2024 | 149 | 149 |
| 2025 | 133 | 129 |
| 2026 | 70 | 72 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Assembly structure including a plurality of spacers and method of manufacturing the same6 Oct 2026US 12,757,375 B2Nanya Technology Corporation
- Enhancement-mode HEMT and manufacturing process of the same6 Oct 2026US 12,757,427 B2STMicroelectronics S,r.l.
- Semiconductor device, semiconductor structure and method for fabricating semiconductor device and semiconductor structure using tilted etch process6 Oct 2026US 12,757,661 B2Nanya Technology Corporation
- Protection of STI features22 Sep 2026US 12,745,614 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of fine pitch pattering for semiconductor device and method of manufacturing the same15 Sep 2026US 12,740,358 B2Samsung Electronics Co., Ltd.
- Semiconductor structure and method for forming the same8 Oct 2026US 2026/0314008 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Base film agent and processing method for workpiece8 Oct 2026US 2026/0314287 A1Disco Corporation
- Gate structure and method1 Oct 2026US 2026/0304884 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Frame mask for singulating wafers by plasma etching24 Sep 2026US 2026/0293563 A1UTAC Headquarters Pte. Ltd.
- Assembly structure including a plurality of spacers and method of manufacturing the same17 Sep 2026US 2026/0282318 A1Nanya Technology Corporation
Most cited
By later US patents
- Cut-mask patterning process for fin-like field effect transistor (FinFET) device3,286US 9,236,267 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Method of spacer patterning to form a target integrated circuit pattern3,272US 9,576,814 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Method for reducing, by a factor or 2.sup.-N, the minimum masking pitch of a photolithographic process1,059US 5,328,810 AMicron Technology, Inc. · 1994
- Method for integrated circuit patterning805US 9,184,054 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2015
- Frequency doubling using spacer mask774US 7,807,578 B2APPLIED Materials.Inc. · 2010