H10P 50/694
Characterised by their behaviour during the process
Official title: {characterised by their behaviour during the process, e.g. soluble masks or redeposited masks}
H10P50/694 (Characterised by their behaviour during the process) appears on 682 US grants and 633 published applications in this corpus.
Search patents in H10P- Granted patents
- 682
- Published applications
- 633
- Assignees
- 187
- Inventors
- 1,247
- Latest grant
- 1 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 3 | 0 |
| 1986 | 1 | 0 |
| 1987 | 7 | 0 |
| 1988 | 5 | 0 |
| 1989 | 3 | 0 |
| 1990 | 4 | 0 |
| 1991 | 7 | 0 |
| 1992 | 8 | 0 |
| 1993 | 2 | 0 |
| 1994 | 4 | 0 |
| 1995 | 3 | 0 |
| 1996 | 2 | 0 |
| 1997 | 3 | 0 |
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
| 2000 | 2 | 0 |
| 2001 | 6 | 2 |
| 2002 | 9 | 7 |
| 2003 | 3 | 1 |
| 2004 | 5 | 14 |
| 2005 | 6 | 9 |
| 2006 | 7 | 7 |
| 2007 | 3 | 3 |
| 2008 | 2 | 0 |
| 2009 | 2 | 4 |
| 2010 | 2 | 6 |
| 2011 | 3 | 4 |
| 2012 | 4 | 4 |
| 2013 | 7 | 16 |
| 2014 | 14 | 27 |
| 2015 | 34 | 58 |
| 2016 | 75 | 87 |
| 2017 | 97 | 121 |
| 2018 | 94 | 72 |
| 2019 | 76 | 37 |
| 2020 | 49 | 38 |
| 2021 | 29 | 26 |
| 2022 | 16 | 23 |
| 2023 | 21 | 26 |
| 2024 | 22 | 19 |
| 2025 | 25 | 10 |
| 2026 | 10 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Underlayer compound for photolithography, multilayered structure formed using the same, and method for manufacturing semiconductor devices using the same1 Sep 2026US 12,724,346 B2Inha University Research and Business Foundation
- Systems and methods for silicon microstructures fabricated via greyscale DRIE with SOI release9 Jun 2026US 12,652,976 B2Lawrence Livermore National Security, LLC
- Frame mask for singulating wafers by plasma etching12 May 2026US 12,628,597 B2UTAC Headquarters Pte. Ltd.
- Semiconductor device and manufacturing methods thereof24 Mar 2026US 12,588,238 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor fin structure cut process24 Mar 2026US 12,588,449 B2Shanghai Huali Integrated Circuit Corporation
- Semiconductor device manufacturing method and semiconductor device24 Sep 2026US 2026/0293558 A1Rapidus Corporation
- Frame mask for singulating wafers by plasma etching24 Sep 2026US 2026/0293563 A1UTAC Headquarters Pte. Ltd.
- Etch monitoring and performing2 Jul 2026US 2026/0190953 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Trenches and method for fabricating the trenches25 Jun 2026US 2026/0182314 A1Hangzhou Fullsemi Semiconductor Co., Ltd.
- Method for fabricating a semiconductor device23 Apr 2026US 2026/0114199 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Method of anisotropically etching silicon679US 5,501,893 ARobert Bosch GmbH · 1996
- Dry etching by alternately etching and depositing567US 4,985,114 AHitachi, Ltd. · 1991
- Surface fabricating device478US 5,110,407 AHitachi, Ltd. · 1992
- Trench etch process for a single-wafer RIE dry etch reactor217US 4,855,017 ATexas Instruments Incorporated · 1989
- Processed stacked dies172US 10,879,212 B2Invensas Bonding Technologies, Inc. · 2020