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US 5,110,407 AGranted
Surface fabricating device
AssigneeHitachi, Ltd.
InventorsTetsuo Ono, Susumu Hiraoka, Keizo Suzuki
Life of this patent
Estimating the term…
Abstract
Anisotropic etching can be obtained in the direction of the incident heated beam of reactive gas with the introduction of a second material for controlling reactivity.
Claims51
In an electronic device manufacturing process, including a hot reactive gas etching method for a substrate of the electronic device, the etching method comprising the steps of:
- providing an etching mask on the substrate;
- maintaining at least one portion of the substrate surface exposed through the mask in a vacuum chamber for the remaining steps of the method;
- etching by directly impinging a hot reactive gas beam produced from a first material through the mask onto the exposed surface of the substrate for a time sufficient to etch the substrate surrface thereby producing an etched area having at least one side and bottom surfaces;
- and
- introducing a second material different from the first material used in producing the hot reactive gas beam so that the second material contacts at least a side surface of the etched hole to an extent sufficient that the ratio of bottom surface etching to side surface etching is substantially increased, to reduce the etching on the side surface.
2 more elements
A surface fabricating device for teating the exposed surface of a substrate, including:
- a vacuum chamber;
- means for providing a hot reactive gas beam inside of said vacuum chamber;
- means for impinging the hot reactive gas beam directly on the exposed surface of the substrate sufficiently to react with the substrate and accomplish the treating;
- and
- means for reducing the reaction rate on selected portions of the exposed surface to a greater extent than the remaining portions by introducing a second material onto the surface of said substrate.
2 more elements
A method for treating the exposed surface of a substrate, including:
- providing a hot reactive gas beam inside of a vacuum chamber;
- impinging the hot reactive gas beam directly on the exposed surface of the substrate sufficiently to react with the substrate and accomplish the treating;
- and
- reducing the reaction rate on selected portions of the exposed surface to a greater extent than the remaining portions by introducing a second material onto the surface of the substrate.
1 more element
Dependencies are inferred from the claim text.