Semiconductor device manufacturing method and semiconductor device

Abstract

A semiconductor device manufacturing method according to the present embodiment includes: a step of applying a photoresist onto a first pattern to be a patterning layer formed by patterning; a step of exposing the photoresist using a mask in which a second pattern is supplementarily added to the first pattern; a step of developing the exposed photoresist in order to form the second pattern and a resist residue; and a step of etching the patterning layer using the dried photoresist. In the etching step, the resist residue of the second pattern is also etched and reduced such that a portion of the patterning layer patterned on the basis of the resist residue of the second pattern does not affect electrical characteristics of the patterning layer patterned on the basis of the first pattern.

Dependencies are inferred from the claim text.