H10P 50/244
Comprising alternated and repeated etching and passivation steps
Official title: {comprising alternated and repeated etching and passivation steps}
H10P50/244 (Comprising alternated and repeated etching and passivation steps) appears on 595 US grants and 751 published applications in this corpus.
Search patents in H10P- Granted patents
- 595
- Published applications
- 751
- Assignees
- 164
- Inventors
- 1,181
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 3 | 0 |
| 1990 | 1 | 0 |
| 1991 | 4 | 0 |
| 1992 | 3 | 0 |
| 1993 | 3 | 0 |
| 1994 | 4 | 0 |
| 1995 | 3 | 0 |
| 1996 | 2 | 0 |
| 1997 | 3 | 0 |
| 1998 | 2 | 0 |
| 1999 | 3 | 0 |
| 2000 | 5 | 0 |
| 2001 | 7 | 2 |
| 2002 | 8 | 7 |
| 2003 | 3 | 5 |
| 2004 | 7 | 9 |
| 2005 | 9 | 14 |
| 2006 | 9 | 15 |
| 2007 | 5 | 14 |
| 2008 | 10 | 19 |
| 2009 | 8 | 8 |
| 2010 | 9 | 10 |
| 2011 | 10 | 19 |
| 2012 | 12 | 29 |
| 2013 | 17 | 26 |
| 2014 | 32 | 39 |
| 2015 | 42 | 42 |
| 2016 | 42 | 45 |
| 2017 | 34 | 45 |
| 2018 | 43 | 42 |
| 2019 | 44 | 47 |
| 2020 | 35 | 34 |
| 2021 | 39 | 40 |
| 2022 | 36 | 49 |
| 2023 | 25 | 35 |
| 2024 | 28 | 33 |
| 2025 | 23 | 15 |
| 2026 | 18 | 108 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Substrate processing method and substrate processing apparatus8 Sep 2026US 12,731,765 B2Tokyo Electron Limited
- Semiconductor packages and methods of manufacturing thereof4 Aug 2026US 12,701,939 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Sidewall inorganic passivation for dielectric etching via surface modification23 Jun 2026US 12,666,893 B2Tokyo Electron Limited
- Device wafer processing method9 Jun 2026US 12,652,978 B2Disco Corporation
- Power device and method of manufacturing the same2 Jun 2026US 12,648,193 B2Samsung Electronics Co., Ltd.
- Semiconductor packages and methods of manufacturing thereof8 Oct 2026US 2026/0314284 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Ion beam directional deposition and etch24 Sep 2026US 2026/0293552 A1Axcelis Technologies, Inc.
- Sidewall inorganic passivation for dielectric etching via surface modification24 Sep 2026US 2026/0293553 A1Tokyo Electron Limited
- Plasma etching processes3 Sep 2026US 2026/0262455 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Etching method and etching apparatus13 Aug 2026US 2026/0239904 A1Tokyo Electron Limited
Most cited
By later US patents
- Method of anisotropically etching silicon679US 5,501,893 ARobert Bosch GmbH · 1996
- Method and apparatus for surface treatment by plasma617US 4,579,623 AHitachi, Ltd. · 1986
- Plasma treatment method and apparatus581US 5,242,539 AHitachi, Ltd. · 1993
- Dry etching by alternately etching and depositing567US 4,985,114 AHitachi, Ltd. · 1991
- Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment490US 5,273,609 ATexas Instruments Incorporated · 1993