US 12,648,193 B2 · Power device and method of manufacturing the same

Abstract

Provided are a power device and a manufacturing method thereof. A power device includes a compound semiconductor layer epitaxially grown on a substrate, a gate formed on the compound semiconductor layer, a source and a drain provided on either side of the gate, a passivation layer provided to cover the source, drain, and gate, and a cooling space region provided to form a cooling path inside the substrate. The cooling space region may be formed to a predetermined depth from the surface of the substrate and include an enlargement region having a width increasing according to a depth from the surface of the substrate. The width of an inlet of the cooling space region is less than a maximum width of the enlargement region, and the passivation layer and the compound semiconductor layer are provided to open the cooling space region.

Claims20

Dependent claims

A power device comprising:

a substrate;
a compound semiconductor layer epitaxially grown on the substrate;
a gate formed on the compound semiconductor layer;
a source provided on a first side of the gate and a drain provided on a second side of the gate;
a passivation layer provided on the source, drain, and gate;
and
a cooling space region configured to form a cooling path inside the substrate,
wherein the cooling space region comprises an enlargement region having a width, which increases according to a depth from a surface of the substrate,
wherein the width of an inlet of the cooling space region is less than a maximum width of the enlargement region, and
wherein the passivation layer and the compound semiconductor layer are configured to form an opening for the cooling space region.

7 more elements

A method of manufacturing a power device, the method comprising:

preparing a substrate;
forming a cooling path inside the substrate by forming a cooling space region including an enlargement region having a width, which increases according to a depth from a surface of the substrate and a width of an inlet of the cooling space region is less than a maximum width of the enlargement region;
epitaxially growing a compound semiconductor layer on the substrate on which the cooling space region is formed;
forming a gate on the compound semiconductor layer;
forming a source on a first side of the gate;
forming a drain on a second side of the gate;
forming a passivation layer on the source, the drain, and the gate, and
opening the cooling space region through the passivation layer and the compound semiconductor layer.

5 more elements

Dependencies are inferred from the claim text.

Power device and method of manufacturing the same

Life of this patent

Power device and method of manufacturing the same

Life of this patent

Abstract

Claims20