Substrate processing method and substrate processing apparatus

A substrate processing apparatus comprising:

• a processing container;
• a stage disposed within the processing container, and configured to place thereon a workpiece having an etching target film;
• and
• a controller,
• wherein the controller is configured to:
• (a) supply a process gas that contains a gas containing halogen other than fluorine and a gas containing oxygen, to a processing container in which a stage is disposed, the stage being configured to place thereon a workpiece including an etching target film;
• (b) perform a first plasma processing on the workpiece by first plasma generated from the process gas under first plasma generation conditions;
• (c) perform a second plasma processing on the workpiece by second plasma generated from the process gas under second plasma generation conditions in which a condition of radio-frequency power and a processing time are different from those in the first plasma generation conditions, and at least some of other conditions are substantially the same;
• (d) generate no plasma;
• and
• (e) repeat (b), (c), and (d) in an order of (b), (c), and (d).