Ion beam directional deposition and etch
AssigneeAxcelis Technologies, Inc.
InventorGlen Gilchrist
Life of this patent
Estimating the term…
Abstract
Processes for modifying an extreme ultraviolet (EUV) pattern generally includes sequentially directionally depositing a sacrificial liner layer and etching to provide a modified EUV pattern. The process includes directionally depositing a sacrificial liner layer by ion beam onto selected surfaces of the EUV pattern; twisting the pattern 90° such that the sacrificial liner layer is aligned in a y-direction; and directionally etching the pattern in the y-direction to form a modified pattern. Then apparatus can include a double plasma ion source for both ion beam directional deposition of silicon compounds, siloxane compounds or the like and directional etch using etchants such as SiF3+.
Claims20
A process for modifying a pattern formed by extreme ultraviolet lithography comprising:
- forming the pattern comprising trench and/or line features;
- depositing a sacrificial liner layer by ion beam onto sidewalls of the trench and/or line features, wherein the trench and/or line features are aligned in a longitudinal direction corresponding to a length dimension of the trench and/or line features;
- rotating the pattern 90° such that the trench and/or line features are orthogonally aligned to the longitudinal direction;
- and
- directionally etching the pattern to form a modified pattern.
A process to modify a pattern comprising circular vias, the process comprising:
- directionally etching the pattern comprising circular vias in a first direction;
- rotating the pattern 90° and directionally etching the pattern comprising circular vias in a second direction;
- repeating rotating the pattern 90° and directionally etching the pattern comprising circular vias in third and fourth directions;
- rotating the pattern 45° and directionally depositing a liner layer in a fifth direction;
- rotating the pattern 90° and directionally depositing the liner layer in a sixth direction;
- repeating rotating the pattern 90° and directionally etching the pattern comprising circular vias in seventh and eighth directions to form a modified pattern of the circular vias having a substantially square profile.
A process to reduce tip-to-tip spacing between lines and/or trenches from using extreme ultraviolet lithography, the process comprising:
- patterning line, via and/or trench features using extreme ultraviolet lithography along a longitudinal direction, wherein adjacent lines, vias and/or trench features along a common axis in the longitudinal direction are spaced apart from one another;
- directionally depositing a sacrificial liner layer by ion beam onto sidewalls along a longitudinal direction of the patterned lines, vias and/or trench features;
- rotating the patterned lines, vias and/or trench features 90° such that the patterned lines and/or trench features are aligned in a y-direction;
- and
- directionally etching the pattern in the y-direction to reduce the spacing between the adjacent lines, vias and/or trench features.
Dependencies are inferred from the claim text.