H10P 50/242
Of group iv materials
Official title: {of Group IV materials}
H10P50/242 (Of group iv materials) appears on 6,034 US grants and 7,544 published applications in this corpus.
Search patents in H10P- Granted patents
- 6,034
- Published applications
- 7,544
- Assignees
- 1,040
- Inventors
- 10,938
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 0 | 0 |
| 1978 | 3 | 0 |
| 1979 | 6 | 0 |
| 1980 | 10 | 0 |
| 1981 | 7 | 0 |
| 1982 | 10 | 0 |
| 1983 | 10 | 0 |
| 1984 | 11 | 0 |
| 1985 | 11 | 0 |
| 1986 | 11 | 0 |
| 1987 | 18 | 0 |
| 1988 | 16 | 0 |
| 1989 | 13 | 0 |
| 1990 | 8 | 0 |
| 1991 | 17 | 0 |
| 1992 | 16 | 0 |
| 1993 | 26 | 0 |
| 1994 | 32 | 0 |
| 1995 | 20 | 0 |
| 1996 | 12 | 0 |
| 1997 | 19 | 0 |
| 1998 | 26 | 0 |
| 1999 | 35 | 0 |
| 2000 | 46 | 0 |
| 2001 | 58 | 22 |
| 2002 | 55 | 71 |
| 2003 | 52 | 58 |
| 2004 | 49 | 84 |
| 2005 | 50 | 74 |
| 2006 | 44 | 89 |
| 2007 | 39 | 91 |
| 2008 | 44 | 87 |
| 2009 | 37 | 86 |
| 2010 | 56 | 84 |
| 2011 | 43 | 102 |
| 2012 | 81 | 130 |
| 2013 | 104 | 219 |
| 2014 | 176 | 330 |
| 2015 | 307 | 465 |
| 2016 | 425 | 476 |
| 2017 | 470 | 604 |
| 2018 | 459 | 506 |
| 2019 | 507 | 555 |
| 2020 | 516 | 588 |
| 2021 | 454 | 508 |
| 2022 | 373 | 473 |
| 2023 | 315 | 430 |
| 2024 | 322 | 499 |
| 2025 | 368 | 503 |
| 2026 | 243 | 410 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for manufacturing semiconductor structure with source/drain structure having modified shape6 Oct 2026US 12,757,422 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Enhancement-mode HEMT and manufacturing process of the same6 Oct 2026US 12,757,427 B2STMicroelectronics S,r.l.
- Method of selectively forming crystalline boron-doped silicon germanium on a surface6 Oct 2026US 12,757,647 B2ASM IP Holding B. V.
- Rapid and precise temperature control for thermal etching6 Oct 2026US 12,757,675 B2Lam Research Corporation
- Substrate processing device and substrate processing method29 Sep 2026US 12,749,656 B2Semes Co., Ltd.
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0313928 A1National Taiwan University
- Methods of forming semiconductor devices8 Oct 2026US 2026/0313934 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-gate device fabrication and structures thereof8 Oct 2026US 2026/0313936 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming source/drain contacts8 Oct 2026US 2026/0314054 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Low pressure plasma etch process for preferential generation of oxide residue and applications for the same8 Oct 2026US 2026/0314283 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of anisotropically etching silicon679US 5,501,893 ARobert Bosch GmbH · 1996
- Method and apparatus for surface treatment by plasma617US 4,579,623 AHitachi, Ltd. · 1986
- Atomic layer etching585US 4,756,794 AThe United States of America as represented by the Secretary of the Navy · 1988
- Plasma treatment method and apparatus581US 5,242,539 AHitachi, Ltd. · 1993
- Methods and apparatus for atomic layer etching577US 8,617,411 B2Lam Research Corporation · 2013