Atomic layer etching

A method for removing a preselected number of single atomic layers from the surface of a crystalline diamond, said method comprising the steps of:

• flooding the diamond surface with a pulse of nitrogen dioxide during a first phase of operation;
• impacting the diamond surface with a pulse of ions of mixed noble and hydrogen gasses during a second phase of operation to remove a single atomic layer from the surface of the diamond;
• and
• repeating both of the flooding and impacting steps each time that an additional atomic layer is to be removed from the surface of the diamond.

A method for removing at least one single atomic layer from the surface of a crystalline diamond, said method comprising the steps of:

• masking the surface of the diamond with a material having a preselected pattern and being unaffected by nitrogen dioxide;
• flooding the preselected pattern with a pulse of nitrogen dioxide during a first phase of operation;
• impacting the diamond surface with a pulse of ions of mixed noble and hydrogen gasses during a second phase of operation to etch out from the surface of the diamond a single atomic layer conforming to said preselected pattern;
• and
• repeating both of the flooding and impacting steps for each additional atomic layer to be removed from the surface of the diamond.

A method for removing at least one single atomic layer from the surface of a crystalline diamond, said method comprising the steps of:

• (a) flooding the diamond surface with a pulse of nitrogen dioxide gas to cause a monolayer of nitrogen dioxide to be adsorbed to the diamond surface during a first phase of operation;
• (b) purging the nitrogen dioxide gas from the space around the diamond;
• (c) impacting the diamond surface with a pulse of ions of mixed noble and hydrogen gasses during a second phase of operation to remove a single atomic layer from the surface of the diamond;
• and
• (d) purging the space about the diamond of any ions and gasses.

An apparatus for removing at least one single atomic layer from the surface of a crystalline diamond, said apparatus comprising:

• a chamber for holding the crystalline diamond;
• a timing control unit for selectively generating a plurality of signals;
• a first delivery system comprised of a first source of nitrogen dioxide, a gas directing device inserted into said chamber, and a first valve coupled between said first source and said gas directing device, said first valve being responsive to a first signal from said timing control unit for enabling a pulse of nitrogen dioxide from said first source to pass through said gas directing device to flood the surface of said diamond and cause a monolayer of nitrogen dioxide to be adsorbed to the diamond surface during a first phase of operation;
• an exhaust vacuum pump coupled to said chamber and being responsive to a second signal from said timing control unit for purging the nitrogen dioxide from said chamber during a second phase of operation;
• and
• a second delivery system comprised of a second source of mixed noble and hydrogen gasses, an ion gun inserted into said chamber, and a second valve coupled between said second source and said ion gun, said second valve being responsive to a third signal from said timing control unit for enabling a pulse of mixed noble and hydrogen gasses from said second source to pass into said ion gun, said ion gun being responsive to the pulse of mixed noble and hydrogen gasses for causing a pulse of ions of said mixed noble and hydrogen gasses to impact the diamond surface during a third phase of operation to remove a single atomic layer from the surface of the diamond;
• said exhaust vacuum pump being responsive to a fourth signal from said timing control unit for purging said chamber of any ions and gasses.