Semiconductor packages and methods of manufacturing thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLung-Kai Mao, Wen-Hsiung Lu, Pei-Wei Lee, Szu-Hsien Lee, Chieh-Ning Feng
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Abstract
A semiconductor package includes a die having a plurality of devices over a first substrate, where the first substrate includes a dopant at a first concentration and the first substrate has a first width along a horizontal direction. The semiconductor package further includes a second substrate fused with the first substrate, where the second substrate includes the dopant at a second concentration greater than the first concentration. The second substrate has a second width along the horizontal direction, where the second width is greater than the first width.
Claims20
A method, comprising:
- forming a semiconductor die including a plurality of devices over a first substrate, wherein the first substrate includes a dopant at a first concentration;
- bonding a backside of the first substrate to a second substrate, wherein the second substrate includes the dopant at a second concentration greater than the first concentration;
- singulating the semiconductor die to form a semiconductor package;
- and
- trimming the semiconductor package such that the first substrate has a first width and the second substrate has a second width that is greater than the first width,
- wherein the first substrate includes a first semiconductor material and the second substrate includes a second semiconductor material having a different crystal structure than the first semiconductor material.
A method, comprising:
- forming a semiconductor die including device features over a first substrate, wherein the first substrate includes a dopant at a first concentration;
- fusing a backside of the first substrate with a second substrate, wherein the second substrate includes the dopant at a second concentration greater than the first concentration;
- cutting the semiconductor die to form a semiconductor package;
- and
- etching sidewalls of the semiconductor package, wherein the step of etching the sidewalls includes selectively etching the first substrate with respect to the second substrate,
- wherein the second substrate is formed of a semiconductor material arranged in a monoclinic structure.
A semiconductor package, comprising:
- a die including a plurality of devices over a first substrate, wherein the first substrate includes a dopant at a first concentration, and wherein the first substrate has a first width along a horizontal direction;
- and
- a second substrate fused with the first substrate, wherein the second substrate includes the dopant at a second concentration greater than the first concentration, and wherein the second substrate has a second width along the horizontal direction, the second width being greater than the first width.
Dependencies are inferred from the claim text.