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US 2026/0239904 A1Published application
Etching method and etching apparatus
AssigneeTokyo Electron Limited
InventorsAkitaka SHIMIZU, Masaki HOSONO, Kaname SATOU
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Abstract
An etching method of etching Si or SiN existing on a substrate, includes: forming an oxide film on a surface of Si or SiN by performing a radical oxidation process on the substrate having Si or SiN; performing a gas-based chemical process on the oxide film; and removing reaction products produced by the gas-based chemical process, wherein the forming the oxide film, the performing the gas-based chemical process, and the removing the reaction products are repeated a plurality of times.
Claims15
An etching method of etching Si or SiN existing on a substrate, comprising:
- forming an oxide film on a surface of the Si or the SiN by performing a radical oxidation process on the substrate in a process container;
- performing a gas-based chemical process on the oxide film by using a process gas including a fluorine-containing gas and an amine-based gas;
- and
- removing reaction products produced by the gas-based chemical process, wherein the forming the oxide film, the performing the gas-based chemical process, and the removing the reaction products are repeated a plurality of times.
1 more element
Dependencies are inferred from the claim text.