H10P 14/3806
Using crystallisation-enhancing elements
Official title: {using crystallisation-enhancing elements}
H10P14/3806 (Using crystallisation-enhancing elements) appears on 1,056 US grants and 794 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,056
- Published applications
- 794
- Assignees
- 148
- Inventors
- 761
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 13 | 0 |
| 1997 | 24 | 0 |
| 1998 | 32 | 0 |
| 1999 | 50 | 0 |
| 2000 | 54 | 0 |
| 2001 | 58 | 33 |
| 2002 | 65 | 81 |
| 2003 | 60 | 87 |
| 2004 | 71 | 63 |
| 2005 | 64 | 81 |
| 2006 | 73 | 84 |
| 2007 | 63 | 70 |
| 2008 | 69 | 44 |
| 2009 | 61 | 26 |
| 2010 | 50 | 32 |
| 2011 | 42 | 32 |
| 2012 | 36 | 20 |
| 2013 | 28 | 14 |
| 2014 | 21 | 14 |
| 2015 | 16 | 8 |
| 2016 | 14 | 16 |
| 2017 | 10 | 10 |
| 2018 | 6 | 10 |
| 2019 | 12 | 11 |
| 2020 | 12 | 17 |
| 2021 | 8 | 12 |
| 2022 | 9 | 11 |
| 2023 | 13 | 4 |
| 2024 | 0 | 6 |
| 2025 | 4 | 6 |
| 2026 | 4 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Film forming method and film forming apparatus15 Sep 2026US 12,740,349 B2Tokyo Electron Limited
- Method for the solid phase crystallisation of an amorphous layer4 Aug 2026US 12,701,933 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Uniform epitaxial growth over crystalline template19 May 2026US 12,635,197 B2APPLIED Materials.Inc.
- Method of forming conductive member and method of forming channel7 Apr 2026US 12,598,926 B2Tokyo Electron Limited
- Method of fabricating thin, crystalline silicon film and thin film transistors28 Oct 2025US 12,456,619 B2
- Method for forming metal oxide layer14 May 2026US 2026/0136618 A1Semiconductor Energy Laboratory Co.Ltd.
- Method of manufacturing semiconductor device5 Feb 2026US 2026/0040840 A1Samsung Electronics Co., Ltd.
- High-quality gan hemt power semiconductor epitaxy wafer with 3d nitride structure and manufacturing method of the same16 Oct 2025US 2025/0324644 A1Wavelord Co., Ltd
- Film forming method9 Oct 2025US 2025/0316477 A1Tokyo Electron Limited
- Grain growth of silicon by metal induced crystallization14 Aug 2025US 2025/0261391 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Method for manufacturing a semiconductor device1,352US 5,643,826 ASemiconductor Energy Laboratory Co.Ltd. · 1997
- Method for manufacturing a semiconductor device972US 5,923,962 ASemiconductor Energy Laboratory Co.Ltd. · 1999
- Method of manufacturing a semiconductor device using a metal which promotes crystallization of silicon and substrate bonding580US 5,821,138 ASemiconductor Energy Laboratory Co.Ltd. · 1998
- Method for manufacturing semiconductor device491US 5,403,772 ASemiconductor Energy Laboratory Co.Ltd. · 1995
- Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same469US 8,048,783 B2Samsung Mobile Display Co., Ltd. · 2011